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MSC1200
SBAS289E
2
www.ti.com
PACKAGE/ORDERING INFORMATION
(1)
SPECIFIED
TEMPERATURE
RANGE
FLASH
MEMORY
PACKAGE
DESIGNATOR
PACKAGE
MARKING
PRODUCT
PACKAGE-LEAD
MSC1200Y2
MSC1200Y2
MSC1200Y3
MSC1200Y3
4k
4k
8k
8k
TQFP-48
"
TQFP-48
"
PFB
"
PFB
"
–40
°
C to +85
°
C
"
–40
°
C to +85
°
C
"
MSC1200Y2
"
MSC1200Y3
"
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet, or refer to our web site at
www.ti.com/msc.
ABSOLUTE MAXIMUM RATINGS
(1)
Analog Inputs
Input Current ............................................................ 100mA, Momentary
Input Current .............................................................. 10mA, Continuous
Input Voltage.............................................AGND – 0.3V to AV
DD
+ 0.3V
Power Supply
DV
DD
to DGND......................................................................–0.3V to 6V
AV
to AGND ......................................................................–0.3V to 6V
AGND to DGND .............................................................. –0.3V to +0.3V
V
to AGND ....................................................... –0.3V to AV
DD
+ 0.3V
Digital Input Voltage to DGND ..............................–0.3V to DV
DD
+ 0.3V
Digital Output Voltage to DGND ...........................–0.3V to DV
+ 0.3V
Maximum Junction Temperature ................................................ +150
°
C
Operating Temperature Range ...................................... –40
°
C to +85
°
C
Storage Temperature Range ....................................... –65
°
C to +150
°
C
Lead Temperature (soldering, 10s) ............................................ +235
°
C
Package Power Dissipation ............................... (T
Max – T
)/
θ
JA
Output Current All Pins ................................................................ 200mA
Output Pin Short Circuit .....................................................................10s
Thermal Resistance, Junction-to-Ambient
(
θ
)....................... 56.5
°
C/W
Thermal Resistance, Junction-to-Case (
θ
JC
) ........................... 12.8
°
C/W
Digital Outputs
Output Current .........................................................100mA, Continuous
I/O Source/Sink Current............................................................... 100mA
Power Pin Maximum .................................................................... 300mA
NOTE: (1) Stresses beyond those listed under
“
Absolute Maximum Ratings
”
may cause permanent damage to the device. Exposure to absolute-maximum-
rated conditions for extended periods may affect device reliability.
FEATURES
(1)
MSC1200Y2
(2)
MSC1200Y3
(2)
Flash Program Memory (Bytes)
Flash Data Memory (Bytes)
Internal Scratchpad RAM (Bytes)
Up to 4k
Up to 2k
128
Up to 8k
Up to 4k
128
NOTES: (1) All peripheral features are the same on all devices; the flash
memory size is the only difference. (2) The last digit of the part number (N)
represents the onboard flash size = (2
N
)kBytes.
MSC1200Yx FAMILY FEATURES
ELECTRICAL CHARACTERISTICS: AV
DD
= 5V
All specifications from T
MIN
to T
MAX
, DV
DD
= +2.7V to 5.25V, f
MOD
= 15.625kHz, PGA = 1, Buffer ON, f
DATA
= 10Hz, Bipolar, and V
REF
≡
(REF IN+)
–
(REF IN
–
) = +2.5V,
unless otherwise noted.
MSC1200Yx
PARAMETER
CONDITION
MIN
TYP
MAX
UNITS
ANALOG INPUT
(AIN0-AIN7, AINCOM)
Analog Input Range
Buffer OFF
Buffer ON
(In+)
–
(In
–
)
Buffer OFF
Buffer ON
AGND
–
0.1
AGND + 50mV
AV
DD
+ 0.1
AV
DD
–
1.5
±
V
REF
/PGA
V
V
V
Full-Scale Input Voltage Range
Differential Input Impedance
Input Current
Bandwidth
Fast Settling Filter
Sinc
2
Filter
Sinc
3
Filter
Programmable Gain Amplifier
Input Capacitance
Input Leakage Current
Burnout Current Sources
7/PGA
0.5
M
nA
–
3dB
–
3dB
–
3dB
0.469
f
DATA
0.318
f
DATA
0.262
f
DATA
User-Selectable Gain Ranges
Buffer ON
Multiplexer Channel Off, T = +25
°
C
Buffer ON
1
128
7
pF
pA
μ
A
0.5
±
2
ADC OFFSET DAC
Offset DAC Range
Offset DAC Monotonicity
Offset DAC Gain Error
Offset DAC Gain Error Drift
±
V
REF
/(2
PGA)
V
8
Bits
±
1.0
0.6
% of Range
ppm/
°
C
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru-
ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.