參數(shù)資料
型號: S71WS512NC0BFWY63
廠商: Spansion Inc.
英文描述: Stacked Multi-Chip Product (MCP)
中文描述: 堆疊式多芯片產(chǎn)品(MCP)
文件頁數(shù): 42/188頁
文件大小: 2252K
代理商: S71WS512NC0BFWY63
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40
S71WS-Nx0 Based MCPs
S71WS-N_01_A4 September 15, 2005
A d v a n c e I n f o r m a t i o n
After the command sequence is written, a sector erase time-out of no less than t
SEA
occurs. Dur-
ing the time-out period, additional sector addresses and sector erase commands may be written.
Loading the sector erase buffer may be done in any sequence, and the number of sectors may be
from one sector to all sectors. The time between these additional cycles must be less than t
SEA
.
Any sector erase address and command following the exceeded time-out (t
SEA
) may or may not
be accepted. Any command other than Sector Erase or Erase Suspend during the time-out period
resets that bank to the read mode. The system can monitor DQ3 to determine if the sector erase
timer has timed out (See the
DQ3: Sector Erase Timeout State Indicator
section.) The time-out
begins from the rising edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data and ad-
dresses are no longer latched. Note that while the Embedded Erase operation is in progress, the
system can read data from the non-erasing banks. The system can determine the status of the
erase operation by reading DQ7 or DQ6/DQ2 in the erasing bank. Refer to
Write Operation Status
for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other
commands are ignored. However, note that a hardware reset immediately terminates the erase
operation. If that occurs, the sector erase command sequence should be reinitiated once that
bank has returned to reading array data, to ensure data integrity.
Figure 10.5 illustrates the algorithm for the erase operation. Refer to the
Erase and Programming
Performance
section for parameters and timing diagrams.
The following is a C source code example of using the sector erase function. Refer to the
Spansion Low Level Driver User’s Guide
(available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Sector Erase Command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)base_addr + 0x555 ) = 0x0080; /* write setup command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write additional unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write additional unlock cycle 2 */
*( (UINT16 *)sector_address ) = 0x0030; /* write sector erase command */
Table 10.15 Software Functions and Sample Code
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 554h
Base + 2AAh
0055h
3
Setup Command
Write
Base + AAAh
Base + 555h
0080h
4
Unlock
Write
Base + AAAh
Base + 555h
00AAh
5
Unlock
Write
Base + 554h
Base + 2AAh
0055h
6
Sector Erase Command
Write
Sector Address
Sector Address
0030h
Unlimited additional sectors may be selected for erase; command( s) must be w ritten w ithin t
SEA
.
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