參數(shù)資料
型號： S71PL129JA0BFI9P2
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： Stacked Multi-Chip Product (MCP) Flash Memory
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA64
封裝： 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
文件頁數(shù)： 64/149頁
文件大?。?/td> 2693K
代理商： S71PL129JA0BFI9P2
64
S29PL129J for MCP
S29PL129J_MCP_00_A0 June 4, 2004
A d v a n c e I n f o r m a t i o n
DC Characteristics
Notes:
1. The I
CC
current listed is typically less than 5 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep
mode current is 1
m
A.
5. Not 100% tested.
6. In S29PL129J there are two CE# (CE1#, CE2#).
7. Valid CE1#/CE2# conditions: (CE1# = V
IL,
CE2# = V
IH,
) or (CE1# = V
IH,
CE2# = V
IL
) or (CE1# = V
IH,
CE2# = V
IH
)
Table 15. CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
V
CC
= V
CC max
; V
ID
= 12.5 V
V
CC
= V
CC max
; V
ID
= 12.5 V
V
OUT
= V
SS
to V
CC
, OE# = V
IH
V
CC
= V
CC max
±
1.0
μA
I
LIT
I
LR
A9, OE#, RESET# Input Load Current
35
μA
Reset Leakage Current
35
μA
I
LO
Output Leakage Current
±
1.0
μA
I
CC1
V
CC
Active Read Current (Notes
1
,
2
)
OE# = V
IH
, V
CC
= V
CC max
(Note 1)
5 MHz
20
30
mA
10 MHz
45
55
I
CC2
V
CC
Active Write Current (Notes
2
,
3
)
OE# = V
IH
, WE# = V
IL
CE#, RESET#, WP#/ACC
= V
IO
±
0.3 V
RESET# = V
SS
±
0.3 V
V
IH
= V
IO
±
0.3 V;
V
IL
= V
SS
±
0.3 V
15
25
mA
I
CC3
V
CC
Standby Current (
Note 2
)
0.2
5
μA
I
CC4
V
CC
Reset Current (
Note 2
)
0.2
5
μA
I
CC5
Automatic Sleep Mode (Notes
2
,
4
)
0.2
5
μA
I
CC6
V
Active Read-While-Program Current
(Notes
1
,
2
)
OE# = V
IH
,
5 MHz
21
45
mA
10 MHz
46
70
I
CC7
V
Active Read-While-Erase Current
(Notes
1
,
2
)
OE# = V
IH
,
5 MHz
21
45
mA
10 MHz
46
70
I
CC8
V
Active Program-While-Erase-
Suspended Current (Notes
2
,
5
)
OE# = V
IH
17
25
mA
I
CC9
V
IL
V
IH
V
HH
V
CC
Active Page Read Current (
Note 2
)
Input Low Voltage
OE# = V
IH
, 8 word Page Read
V
IO
= 2.7–3.6 V
V
IO
= 2.7–3.6 V
V
CC
= 3.0 V ± 10%
10
15
mA
–0.5
0.8
V
Input High Voltage
2.0
V
CC
+ 0.3
9.5
V
Voltage for ACC Program Acceleration
8.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 3.0 V
±
10%
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 2.0 mA, V
CC
= V
CC min
, V
IO
= 2.7–3.6
V
0.4
V
V
OH
Output High Voltage
I
OH
= –2.0 mA, V
CC
= V
CC min
, V
IO
= 2.7–3.6
V
2.4
V
V
LKO
Low V
CC
Lock-Out Voltage (
Note 5
)
2.3
2.5
V
相關(guān)PDF資料
PDF描述
S71PL129JC0BFW9Z0 Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129JB0BFW9Z0 Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129JA0BFW9Z0 Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129JC0BAW9Z2 Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129JB0BAW9Z2 Stacked Multi-Chip Product (MCP) Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S71PL129JA0BFI9P3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129JA0BFI9U0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129JA0BFI9U2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129JA0BFI9U3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129JA0BFI9Z0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*