參數(shù)資料
型號(hào)： S29NS032JPLBJW000
廠商： Spansion Inc.
英文描述： 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述： 110納米CMOS 1.8伏只有同時(shí)讀/寫，突發(fā)模式閃存
文件頁數(shù)： 84/85頁
文件大?。?/td> 799K
代理商： S29NS032JPLBJW000
80
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
DQ6: Toggle Bit I
Replaced “100 μs” with “t
ASP
”.
Replaced “1 μs” with “t
PSP
”.
DQ3: Sector Erase Timer
Replaced “50 μs” with “t
SEA
’.
Erase and Programming Performance
Updated “Accelerated Chip Erase Time” as per the following:
Distinctive Characteristics
Deleted the following:
“Minimum 100,000 erase cycle guarantee per sector”.
“20-year data retention”.
“Reliable operation for the life of the system”.
Erase and Programming Performance
In Note 2 changed “100,000” to “1,000,000”.
8-, 16-, and 32-W ord Linear Burst Address W rap Around
Updated drawing.
Unlock Bypass Command Sequence
Removed “The host system may also initiate the chip erase and sector erase sequences in the
unlock bypass mode. The erase command sequences are four cycles in length instead of six
cycles.”
Command Definitions
Removed the Unlock Bypass “sector erase” and “chip erase” rows.
Table 18, “ Command Definitions”
Removed Unlock Bypass Sector Erase section.
Removed Chip Erase section.
W P# Boot Sector Protection
Updated 2nd paragraph as follows: “If using the Unlock Bypass feature: on the 2nd program cy-
cle, after the Unlock Bypass command is written, the WP# signal must be asserted on the 2nd
cycle.”
Global
Replaced all “AMD” references with “
contact your local Spansion sales office”.
Chip Erase Command Sequence
Removed “The host system may also initiate the chip erase command sequence while the device
is in the unlock bypass mode. The command sequence is two cycles in length instead of six cycles.
Sector Erase Command Sequence
Replaced “50 μs” with “t
SEA”.
Original
Updated
128Mb
45
50
64Mb
30
25
32Mb
TBD
12.5
16Mb
TBD
6.25
相關(guān)PDF資料
PDF描述
S29NS032JPLBJW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBFW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBJW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS032JPLBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories
S29NS064J0LBAW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories
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