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參數(shù)資料
| 型號： | S29NS032JPLBJW000 |
| 廠商： | Spansion Inc. |
| 英文描述： | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| 中文描述： | 110納米CMOS 1.8伏只有同時(shí)讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 82/85頁 |
| 文件大?。?/td> | 799K |
| 代理商： | S29NS032JPLBJW000 |
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78
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
Revision Summary
Revision A (May 16, 2003)
Initial Release.
Revision A1 (August 11, 2003)
Connection Diagram
Modified Connection Diagrams for Am29N129J and S29NS064J.
I nput/ Output Descriptions
Changed V
SS
to GND, removed V
CCQ
and V
SSQ
.
Requirements for Synchronous ( Burst) Read Operation, Continuous Burst
First paragraph, bold text, second sentence: the highest address changed to 000000h.
RESET# : Hardw are Reset I nput
Fourth paragraph: t
READY
changed to tR
EADYW
.
Autoselect Command Sequence
Added Table 11 title, Autoselect Device ID.
W P# Boot Sector Protection, Low V
CC
W rite I nhibit, Table immediately
preceding Program Command Sequence section
Modified Read Data for Device ID, Word 1, Device ID, Word 2 for S29NS064J only, Device ID, Word
3.
Table 14, Command Definitions
Added Notes 10 and 12; changed BA = Address of the bank from A22-A20 to A22-A21 for
S29NS128J, A21-A19 to A21-A20 for S29NS064J.
AC Characteristics CMOS Compatible
Added I
CCW
, Typ and Max values for I
PPW
and I
CCW
; added I
CCE
, Typ and Max values for I
PPE
and
I
CCE
.
AC Characteristics, Figure 15, 16, 18, and 19
Changed AVD to AVD#.
Revision A2 (August 19, 2003)
Requirements for Synchronous ( Burst) Read Operation
Modified bold text to indicate “highest address to 00000h”.
Revision A3 (September 10, 2003)
DC Characteristics, CMOS Compatible
Changed I
CC3
and I
CC4
Max values.
Revision A4 (November 13, 2003)
Global
Converted to Spansion format.
Revision A5 (February 5, 2004)
Ordering I nformation
Added 0L Clock rate/asynchronous speed.
Updated Valid combinations to reflect addition.
Appendix C and D
Added C and Removed D.
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PDF描述 |
|---|---|
| S29NS032JPLBJW002 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBFW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBJW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS032JPLBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
| S29NS064J0LBAW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
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