參數(shù)資料
型號： S29NS032JPLBJW000
廠商： Spansion Inc.
英文描述： 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述： 110納米CMOS 1.8伏只有同時讀/寫，突發(fā)模式閃存
文件頁數(shù)： 7/85頁
文件大?。?/td> 799K
代理商： S29NS032JPLBJW000
March 22, 2006 S29NS-J_00_A10
S29NS-J
3
D a t a S h e e t
The devices use Chip Enable (CE#), Write Enable (WE#), Address Valid (AVD#) and Output En-
able (OE#) to control asynchronous read and write operations. For burst operations, the devices
additionally require Ready (RDY) and Clock (CLK). This implementation allows easy interface with
minimal glue logic to microprocessors/microcontrollers for high performance read operations.
The devices offer complete compatibility with the
J EDEC 42.4 single-pow er-supply Flash
command set standard
. Commands are written to the command register using standard mi-
croprocessor write timings. Reading data out of the device are similar to reading from other Flash
or EPROM devices.
The host system can detect whether a program or erase operation is complete by using the device
status bit
DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has
been completed, the device automatically returns to reading array data.
The
sector erase architecture
allows memory sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The devices are fully erased when shipped from the
factory.
Hardw are data protection
measures include a low V
CC
detector that automatically inhibits write
operations during power transitions. The devices also offer three types of data protection at the
sector level. The
sector lock/ unlock command sequence
disables or re-enables both program
and erase operations in any sector. When at V
IL
,
W P#
locks the highest two sectors. Finally, when
A
cc
is at V
IL
, all sectors are locked.
The devices offer two power-saving features. When addresses have been stable for a specified
amount of time, the device enters the
automatic sleep mode
. The system can also place the
device into the
standby mode
. Power consumption is greatly reduced in both modes.
S29NS032J
Bank A Sectors
Bank B, C & D Sectors
Quantity
Size
Quantity
Size
4
8 Kwords
16
32 Kwords
15
32 Kwords
8 Mbits total
24
Mbits total
S29NS016J
Bank A Sectors
Bank B, C & D Sectors
Quantity
Size
Quantity
Size
4
8 Kwords
8
32 Kwords
7
32 Kwords
4 Mbits total
12
Mbits total
相關(guān)PDF資料
PDF描述
S29NS032JPLBJW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBFW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBJW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS032JPLBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories
S29NS064J0LBAW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories
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