參數(shù)資料
型號(hào)： S29NS032JPLBJW000
廠商： Spansion Inc.
英文描述： 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述： 110納米CMOS 1.8伏只有同時(shí)讀/寫，突發(fā)模式閃存
文件頁數(shù)： 69/85頁
文件大?。?/td> 799K
代理商： S29NS032JPLBJW000
March 22, 2006 S29NS-J_00_A10
S29NS-J
65
D a t a S h e e t
AC Characteristics
Note:
8-word linear burst mode shown. 16- and 32-word linear burst read modes behave similarly. D0 represents the first
word of the linear burst.
Figure 20. 8-, 16-, and 32-Word Linear Burst Address Wrap Around
Note:
Cxx indicates the clock that triggers data Dxx on the outputs; for example, C60 triggers D60.
Figure 21. Latency with Boundary Crossing
CLK
Addre
ss
(hex)
D0
D1
D2
A/DQ15
–
A/DQ0
CE#
Addre
ss
wr
a
p
s
ba
ck to
b
eginning of
a
ddre
ss
gro
u
p.
39
39
3A
3B
3C
3D
3E
3F
38
Initi
a
l Acce
ss
V
IL
V
IH
AVD#
V
IL
V
IH
D3
D4
D5
D6
D7
(
s
t
a
y
s
low)
V
IL
OE#
CLK
Address (hex)
C60
C61
C62
C63
C63
C63
C64
C65
C66
C67
D60
D61
D62
D63
D64
D65
D66
D67
(stays high)
AVD#
RDY
A/DQ15
–
A/DQ0
OE#,
CE#
(stays low)
Address boundary occurs every 64 words, beginning at address
00003Fh: 00007Fh, 0000BFh, etc. Address 000000h is also a boundary crossing.
3C
3D
3E
3F
40
41
42
43
latency
t
RACC
V
IH
V
IL
V
IH
V
IL
相關(guān)PDF資料
PDF描述
S29NS032JPLBJW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS032JPLBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories
S29NS064J0LBAW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories
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