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參數(shù)資料
| 型號： | S29NS032JPLBJW000 |
| 廠商： | Spansion Inc. |
| 英文描述： | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| 中文描述： | 110納米CMOS 1.8伏只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 51/85頁 |
| 文件大?。?/td> | 799K |
| 代理商： | S29NS032JPLBJW000 |
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March 22, 2006 S29NS-J_00_A10
S29NS-J
47
D a t a S h e e t
RDY: Ready
The RDY pin is a dedicated status output that indicates valid output data on A/DQ15–A/DQ0 dur-
ing burst (synchronous) reads. When RDY is asserted (RDY = V
OH
), the output data is valid and
can be read. When RDY is de-asserted (RDY = V
OL
), the system should wait until RDY is re-as-
serted before expecting the next word of data.
In synchronous (burst) mode with CE# = OE# = V
IL
, RDY is de-asserted under the following con-
ditions: during the initial access; after crossing the internal boundary between addresses 3Eh and
3Fh (and addresses offset from these by a multiple of 64); and when the clock frequency is less
than 6 MHz (in which case RDY is de-asserted every third clock cycle). The RDY pin will also switch
during status reads when a clock signal drives the CLK input. In addition, RDY = V
OH
when CE#
= V
IL
and OE# = V
IH
, and RDY is Hi-Z when CE# = V
IH
.
In asynchronous (non-burst) mode, the RDY pin does not indicate valid or invalid output data.
Instead, RDY = V
OH
when CE# = V
IL
, and RDY is Hi-Z when CE# = V
IH
.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or
complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read
at any address in the same bank, and is valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase operation), and during the sector erase time-
out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any ad-
dress cause DQ6 to toggle. Note that OE# must be low during toggle bit status reads. When the
operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6
toggles for approximately t
ASP
, then returns to reading array data. If not all selected sectors are
protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the se-
lected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or
is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm
is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops tog-
gling. However, the system must also use DQ2 to determine which sectors are erasing or erase-
suspended. Alternatively, the system can use DQ7 (see the subsection on
DQ7: Data# Polling
).
If a program address falls within a protected sector, DQ6 toggles for approximately after t
PSP
the
program command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embed-
ded Program algorithm is complete.
See the following for additional information: (toggle bit flowchart),
DQ6: Toggle Bit I
(descrip-
tion), 19 (toggle bit timing diagram), and
Table 19
(compares DQ2 and DQ6).
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively
erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-
suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command
sequence.
DQ2 toggles when the system reads at addresses within those sectors that have been selected
for erasure. Note that OE# must be low during toggle bit status reads. But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates
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| S29NS032JPLBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
| S29NS064J0LBAW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
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