- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365400 > S29NS032JPLBJW000 (Spansion Inc.) 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories PDF資料下載
參數(shù)資料
| 型號(hào)： | S29NS032JPLBJW000 |
| 廠商： | Spansion Inc. |
| 英文描述： | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| 中文描述： | 110納米CMOS 1.8伏只有同時(shí)讀/寫，突發(fā)模式閃存 |
| 文件頁(yè)數(shù)： | 24/85頁(yè) |
| 文件大?。?/td> | 799K |
| 代理商： | S29NS032JPLBJW000 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)當(dāng)前第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)
20
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software inter-
rogation handshake, which allows specific vendor-specified software algorithms to be used for
entire families of devices. Software support can then be device-independent, JEDEC ID-indepen-
dent, and forward- and backward-compatible for the specified flash device families. Flash vendors
can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h any time the device is ready to read array data. The system can read CFI information
at the addresses given in Tables 3–6. To terminate reading CFI data, the system must write the
reset command.
The system can also write the CFI query command when the device is in the autoselect mode.
The device enters the CFI query mode, and the system can read CFI data at the addresses given
in Tables 3–6. The system must write the reset command to return the device to the autoselect
mode.
For further information, please refer to the CFI Specification and CFI Publication 100, available
through the World Wide Web at http://www.amd.com/flash/cfi. Alternatively, Contact your local
Spansion sales office for copies of these documents.
Table 3.
CFI Query Identification String
Addresses
Data
Description
S29NS128J
S29NS064J
S29NS032J
S29NS016J
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM
Extended Table (00h = none exists)
Table 4.
System Interface String
(Sheet 1 of 2)
Addresses
Data
Description
S29NS128J
S29NS064J
S29NS032J
S29NS016J
1Bh
0017h
V
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
V
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
A
Min. voltage (00h = no A
cc
pin present)
Refer to 4Dh
1Eh
0000h
A
Max. voltage (00h = no A
cc
pin present)
Refer to 4Eh
1Fh
0003h
Typical timeout per single byte/word write 2
N
μs
Typical timeout for Min. size buffer write 2
N
μ
s
(00h = not supported)
20h
0000h
21h
0009h
Typical timeout per individual block erase 2
N
ms
22h
0000h
Typical timeout for full chip erase 2
N
ms
(00h = not supported)
23h
0005h
Max. timeout for byte/word write 2
N
times typical
24h
0000h
Max. timeout for buffer write 2
N
times typical
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29NS032JPLBJW002 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBFW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBJW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS032JPLBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
| S29NS064J0LBAW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。