參數(shù)資料
型號： S29GL01GP13FAI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 1G X 1 FLASH 3V PROM, 130 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, FBGA-64
文件頁數(shù)： 69/71頁
文件大?。?/td> 990K
代理商： S29GL01GP13FAI010
November21,2006 S29GL-P_00_A3
S29GL-P MirrorBit
TM
Flash Family
67
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Table 12.6
System Interface String
Addresses (x16)
Addresses (x8)
Data
Description
1Bh
36h
0027h
V
CC
Min. (write/erase) D7–D4: volt, D3–D0: 100 mV
V
CC
Max. (write/erase) D7–D4: volt, D3–D0: 100 mV
V
PP
Min. voltage (00h = no V
PP
pin present)
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical timeout per single byte/word write 2
N
μs
1Ch
38h
0036h
1Dh
3Ah
0000h
1Eh
3Ch
0000h
1Fh
3Eh
0006h
20h
40h
0006h
Typical timeout for Min. size buffer write 2
N
μs (00h = not supported)
21h
42h
0009h
Typical timeout per individual block erase 2
N
ms
22h
44h
0013h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
46h
0003h
Max. timeout for byte/word write 2
N
times typical
24h
48h
0005h
Max. timeout for buffer write 2
N
times typical
25h
4Ah
0003h
Max. timeout per individual block erase 2
N
times typical
26h
4Ch
0002h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Table 12.7
Device Geometry Definition
Addresses (x16)
Addresses (x8)
Data
Description
27h
4Eh
001Bh
001Ah
0019h
0018h
Device Size = 2
N
byte
1B = 1 Gb, 1A= 512 Mb, 19 = 256 Mb, 18 = 128 Mb
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0006h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
000xh
0000h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
00FFh, 0003h, 0000h, 0002h =1 Gb
00FFh, 0001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
31h
32h
33h
34h
60h
64h
66h
68h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
相關(guān)PDF資料
PDF描述
S29GL01GP13FAI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI013 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI020 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI022 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI023 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL01GP13FAI012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI020 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI022 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI023 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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