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參數資料
| 型號： | S29GL01GP13FAI010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁數： | 66/71頁 |
| 文件大?。?/td> | 990K |
| 代理商： | S29GL01GP13FAI010 |
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64
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November21,2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Legend
X = Don’t care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of the WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A
max
–A16 uniquely select any sector.
WBL = Write Buffer Location. The address must be within the same write buffer page as PA.
WC = Word Count is the number of write buffer locations to load minus 1.
Notes
1. See
Table 7.1 on page 14
for description of bus operations.
2. All values are in hexadecimal.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
5. Address bits A
MAX
:A16 are don’t cares for unlock and command cycles, unless SA or PA required. (A
MAX
is the Highest Address pin.).
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high (while the device is providing status
data).
8. See
Table 7.2 on page 17
for device ID values and definitions.
9. The fourth, fifth, and sixth cycles of the autoselect command sequence are read cycles.
10.The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more information. This is same as PPB
Status Read except that the protect and unprotect statuses are inverted here.
11.The data value for DQ7 is “1” for a serialized, protected Secured Silicon Sector region and “0” for an unserialized, unprotected region. See
Table 7.3 on page 17
for data and definitions.
12.Command is valid when device is ready to read array data or when device is in autoselect mode.
13.Command sequence returns device to reading array after being placed in a Write-to-Buffer-Abort state. Full command sequence is required if resetting out of
abort while in Unlock Bypass mode.
14.The Unlock-Bypass command is required prior to the Unlock-Bypass-Program command.
15.The Unlock-Bypass-Reset command is required to return to reading array data when the device is in the unlock bypass mode.
16.The system can read and program/program suspend in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase
Suspend command is valid only during a sector erase operation.
17.The Erase Resume/Program Resume command is valid only during the Erase Suspend/Program Suspend modes.
18.The Exit command returns the device to reading the array.
Table 12.3
S29GL-P Memory Array Command Definitions, x8
Command (Notes)
C
Bus Cycles (Notes
1
–
5
)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read
(6)
1
RA
RD
Reset
(7)
1
XXX
F0
A
8
,
9
)
Manufacturer ID
4
AAA
AA
555
55
AAA
90
X00
01
Device ID
(8)
4
AAA
AA
555
55
AAA
90
X02
XX7E
X1C
(8)
X1E
(8)
Sector Protect Verify
(10)
4
AAA
AA
555
55
AAA
90
[SA]X04
(10)
Secure Device Verify
(11)
4
AAA
AA
555
55
AAA
90
X06
(11)
CFI Query
(12)
1
AA
98
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Write to Buffer
3
AAA
AA
555
55
SA
25
SA
WC
WBL
PD
WBL
PD
Program Buffer to Flash (confirm)
1
SA
29
Write-to-Buffer-Abort Reset
(13)
3
AAA
AA
555
55
555
F0
U
Enter
3
AAA
AA
555
55
AAA
20
Program
(14)
2
XXX
A0
PA
PD
Sector Erase
(14)
2
XXX
80
SA
30
Chip Erase
(14)
2
XXX
80
XXX
10
Reset
(15)
2
XXX
90
XXX
00
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Erase Suspend/Program Suspend
(16)
1
XXX
B0
Erase Resume/Program Resume
(17)
1
XXX
30
Secured Silicon Sector Entry
3
AAA
AA
555
55
AAA
88
Secured Silicon Sector Exit
(18)
4
AAA
AA
555
55
AAA
90
XX
00
相關PDF資料 |
PDF描述 |
|---|---|
| S29GL01GP13FAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29GL01GP13FAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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