- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365398 > S29GL01GP13FAI010 (SPANSION LLC) 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology PDF資料下載
參數(shù)資料
| 型號(hào)： | S29GL01GP13FAI010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 49/71頁 |
| 文件大?。?/td> | 990K |
| 代理商： | S29GL01GP13FAI010 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁當(dāng)前第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁
November21,2006 S29GL-P_00_A3
S29GL-P MirrorBit
TM
Flash Family
47
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Note
Base = Base Address.
/* Example: SecSi Sector Exit Command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)base_addr + 0x555 ) = 0x0090; /* write SecSi Sector Exit cycle 3 */
*( (UINT16 *)base_addr + 0x000 ) = 0x0000; /* write SecSi Sector Exit cycle 4 */
11. Electrical Specifications
11.1
Absolute Maximum Ratings
Notes
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may undershoot V
SS
to –2.0 V for periods of up
to 20 ns. See
Figure 11.1
. Maximum DC voltage on input or I/Os is V
CC
+ 0.5 V. During voltage transitions inputs or I/Os may overshoot to
V
CC
+ 2.0 V for periods up to 20 ns. See
Figure 11.2
.
2. Minimum DC input voltage on pins A9 and ACC is -0.5V. During voltage transitions, A9 and ACC may overshoot V
SS
to –2.0 V for periods
of up to 20 ns. See
Figure 11.1
. Maximum DC voltage on pins A9 and ACC is +12.5 V, which may overshoot to 14.0 V for periods up to 20
ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not
implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
Figure 11.1
Maximum Negative Overshoot Waveform
Table 10.4
Secured Silicon Sector Exit
(LLD Function = lld_SecSiSectorExitCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Base + AAAh
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 555h
Base + 2AAh
0055h
Exit Cycle 3
Write
Base + AAAh
Base + 555h
0090h
Exit Cycle 4
Write
Base + AAAh
Base + 000h
0000h
Description
Rating
Storage Temperature, Plastic Packages
–65°C to +150°C
Ambient Temperature with Power Applied
–65°C to +125°C
Voltage with Respect to Ground
All Inputs and I/Os except as noted below
(Note 1)
–0.5 V to V
CC
+ 0.5 V
V
CC
(Note 1)
V
IO
A9 and ACC (Note 2)
–0.5 V to +4.0 V
–0.5V to +4.0V
–0.5 V to +12.5 V
Output Short Circuit Current (Note 3)
200 mA
20 n
s
20 n
s
+0 .
8
V
–0.5 V
20 n
s
–2.0 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL01GP13FAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP13FAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。