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參數(shù)資料
| 型號： | S29GL01GP13FAI010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 67/71頁 |
| 文件大小： | 990K |
| 代理商： | S29GL01GP13FAI010 |
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November21,2006 S29GL-P_00_A3
S29GL-P MirrorBit
TM
Flash Family
65
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Legend
X = Don’t care
RD(0) = Read data.
SA = Sector Address. Address bits A
max
–A16 uniquely select any sector.
PWD = Password
PWD
x
= Password word0, word1, word2, and word3.
Data = Lock Register Contents: PD(0) = Secured Silicon Sector Protection Bit, PD(1) = Persistent Protection Mode Lock Bit, PD(2) = Password Protection Mode
Lock Bit.
Notes
1. See
Table 7.1 on page 14
for description of bus operations.
2. All values are in hexadecimal.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
5. Address bits A
MAX
:A16 are don’t cares for unlock and command cycles, unless SA or PA required. (A
MAX
is the Highest Address pin.)
6. All Lock Register bits are one-time programmable. Program state = “0” and the erase state = “1.” The Persistent Protection Mode Lock Bit and the Password
Protection Mode Lock Bit cannot be programmed at the same time or the Lock Register Bits Program operation aborts and returns the device to read mode. Lock
Register bits that are reserved for future use default to “1’s.” The Lock Register is shipped out as “FFFF’s” before Lock Register Bit program execution.
7. The Exit command returns the device to reading the array.
8. If any Command Set Entry command was written, an Exit command must be issued to reset the device into read mode.
9. For PWDx, only one portion of the password can be programmed per each “A0” command.
10.Note that the password portion can be entered or read in any order as long as the entire 64-bit password is entered or read.
11.If ACC = V
HH
, sector protection matches when ACC = V
IH
.
12.Protected State = “00h,” Unprotected State = “01h.”
13.The All PPB Erase command embeds programming of all PPB bits before erasure.
Table 12.4
S29GL-P Sector Protection Command Definitions, x8
Command (Notes)
C
Bus Cycles (Notes
1
–
5
)
First/Seventh
Second/Eighth
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
L
Command Set Entry
3
AAA
AA
555
55
AAA
40
Bits Program
(6)
2
XXX
A0
XXX
DATA
Read
(6)
1
00
DATA
Command Set Exit (
7
,
8
)
2
XXX
90
XXX
00
P
Command Set Entry
3
AAA
AA
555
55
AAA
60
Password Program
(9)
2
XXX
A0
PWA
x
PWD x
Password Read
(10)
8
00
PWD0
01
PWD 1
02
PWD 2
03
PWD
3
04
PWD 4
05
PWD 5
06
PWD 6
07
PWD 7
Password Unlock
(10)
11
00
25
00
03
00
PWD 0
01
PWD
1
02
PWD 2
03
PWD 3
04
PWD 4
05
PWD 5
06
PWD 6
07
PWD
7
00
29
Command Set Exit (
7
,
8
)
2
XXX
90
XXX
00
N
PPB Command Set Entry
3
AAA
AA
55
55
AAA
C0
PPB Program (
11
,
12
)
2
XXX
A0
SA
00
All PPB Erase
(13)
2
XXX
80
00
30
PPB Status Read
(12)
1
SA
RD(0)
PPB Command Set Exit (
7
,
8
)
2
XXX
90
XXX
00
G
V
PPB Lock Command Set Entry
3
AAA
AA
555
55
AAA
50
PPB Lock Bit Set
(12)
2
XXX
A0
XXX
00
PPB Lock Status Read
(12)
1
XXX
RD(0)
PPB Lock Command Set Exit (
7
,
8
)
2
XXX
90
XXX
00
V
DYB Command Set Entry
3
AAA
AA
555
55
AAA
E0
DYB Set (
11
,
12
)
2
XXX
A0
SA
00
DYB Clear
(12)
2
XXX
A0
SA
01
DYB Status Read
(12)
1
SA
RD(0)
DYB Command Set Exit (
7
,
8
)
2
XXX
90
XXX
00
相關PDF資料 |
PDF描述 |
|---|---|
| S29GL01GP13FAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP13FAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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