參數(shù)資料
型號(hào)： S29GL01GP13FAI010
廠商： SPANSION LLC
元件分類(lèi)： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 1G X 1 FLASH 3V PROM, 130 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, FBGA-64
文件頁(yè)數(shù)： 21/71頁(yè)
文件大?。?/td> 990K
代理商： S29GL01GP13FAI010
November21,2006 S29GL-P_00_A3
S29GL-P MirrorBit
TM
Flash Family
19
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
7.7
Program/Erase Operations
These devices are capable of several modes of programming and or erase operations which are described in
detail in the following sections.
During a write operation, the system must drive CE# and WE# to V
IL
and OE# to VIH when providing an
address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data is
latched on the 1st rising edge of WE# or CE#.
The Unlock Bypass feature allows the host system to send program commands to the Flash device without
first writing unlock cycles within the command sequence. See
Section 7.7.8
for details on the Unlock Bypass
function.
Note the following:
When the Embedded Program algorithm is complete, the device returns to the read mode.
The system can determine the status of the program operation by using DQ7 or DQ6. Refer to the Write
Operation Stat section for information on these status bits.
An “0” cannot be programmed back to a “1.” A succeeding read shows that the data is still “0.”
Only erase operations can convert a “0” to a “1.”
Any commands written to the device during the Embedded Program Algorithm are ignored except the
Program Suspend command.
Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in
progress.
A hardware reset immediately terminates the program operation and the program command sequence
should be reinitiated once the device has returned to the read mode, to ensure data integrity.
Programming is allowed in any sequence and across sector boundaries for single word programming
operation.
Programming to the same word address multiple times without intervening erases is permitted.
7.7.1
Single Word Programming
Single word programming mode is one method of programming the Flash. In this mode, four Flash command
write cycles are used to program an individual Flash address. The data for this programming operation could
be 8 or 16-bits wide.
While the single word programming method is supported by all Spansion devices, in general it is not
recommended for devices that support Write Buffer Programming. See
Table 12.1 on page 61
for the
required bus cycles and
Figure 7.1
for the flowchart.
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can determine the status of the program operation by using
DQ7 or DQ6. Refer to the Write Operation Status section for information on these status bits.
During programming, any command (except the Suspend Program command) is ignored.
The Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in
progress.
A hardware reset immediately terminates the program operation. The program command sequence should
be reinitiated once the device has returned to the read mode, to ensure data integrity.
Programming to the same address multiple times continuously (for example, “walking” a bit within a word)
is permitted.
相關(guān)PDF資料
PDF描述
S29GL01GP13FAI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI013 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI020 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI022 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI023 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL01GP13FAI012 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI013 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI020 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI022 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI023 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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