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參數(shù)資料
| 型號(hào)： | S29GL01GP13FAI010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 62/71頁 |
| 文件大?。?/td> | 990K |
| 代理商： | S29GL01GP13FAI010 |
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60
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November21,2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
11.7.5
Erase And Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25°C, 3.6 V V
CC
, 10,000 cycles, checkerboard pattern.
2. Under worst case conditions of -40°C, V
CC
= 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 32-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words program faster than the maximum
program times listed.
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
See Tables
12.1
–
12.4
.
11.7.6
TSOP Pin and BGA Package Capacitance
Notes
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Table 11.8
Erase And Programming Performance
Parameter
Typ
(Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming
prior to erasure
(Note 5)
Chip Erase Time
S29GL128P
64
256
sec
S29GL256P
128
512
S29GL512P
256
1024
S29GL01GP
512
2048
Total Write Buffer Time
(Note 3)
480
μs
Excludes system level
overhead
(Note 6)
Total Accelerated Write Buffer Programming Time
(Note 3)
432
μs
Chip Program Time
(Note 4)
S29GL128P
123
sec
S29GL256P
246
S29GL512P
492
S29GL01GP
984
Table 1:
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL01GP13FAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP13FAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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