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參數(shù)資料
| 型號： | S29GL01GP13FAI010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 60/71頁 |
| 文件大?。?/td> | 990K |
| 代理商： | S29GL01GP13FAI010 |
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58
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November21,2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
11.7.4
S29GL-P Alternate CE# Controlled Erase and Program Operations
Notes
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications are tested with V
IO
= 1.8 V and V
CC
= 3.0 V
6. Write Cycle Time = Access Time at V
CC
.
Table 11.7
S29GL-P Alternate CE# Controlled Erase and Program Operations
Parameter
Description
(Notes)
Speed Options
JEDEC
Std.
110
120
130
Unit
t
AVAV
t
WC
Write Cycle Time
(Note 1)
Min
110
(Note 6)
120
130
ns
t
AVWL
t
AS
t
ASO
t
AH
t
AHT
t
DS
t
DH
t
CEPH
t
OEPH
Address Setup Time
Min
0
ns
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
ELAX
Address Hold Time
Min
45
ns
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
t
DVEH
t
EHDX
Data Setup Time
Min
45
ns
Data Hold Time
Min
0
ns
CE# High during toggle bit polling
Min
20
ns
OE# High during toggle bit polling
Min
20
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
EHWH
t
ELEH
t
EHEL
t
WHWH1
t
WS
t
WH
t
CP
t
CPH
t
WHWH1
WE# Setup Time
Min
0
ns
WE# Hold Time
Min
0
ns
CE# Pulse Width
Min
35
ns
CE# Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes
2
,
3
)
Typ
480
μs
Effective Write Buffer Program Operation (Notes
2
,
4
)
Per
Word
Typ
15
μs
Effective Accelerated Write Buffer Program Operation
(Notes
2
,
4
)
Per
Word
Typ
13.5
μs
Program Operation
(Note 2)
Word
Typ
60
μs
Accelerated Programming Operation
(Note 2)
Word
Typ
54
μs
t
WHWH2
t
WHWH2
Sector Erase Operation
(Note 2)
Typ
0.5
sec
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL01GP13FAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP13FAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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