參數(shù)資料
型號： S29GL01GP13FAI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 1G X 1 FLASH 3V PROM, 130 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, FBGA-64
文件頁數(shù)： 3/71頁
文件大小： 990K
代理商： S29GL01GP13FAI010
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.
Publication Number
S29GL-P_00
Revision
A
Amendment
3
Issue Date
November 21, 2006
General Description
The Spansion S29GL01G/512/256/128P are Mirrorbit Flash products fabricated on 90 nm process technology. These
devices offer a fast page access time of 25 ns with a corresponding random access time of 110 ns. They feature a Write Buffer
that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time
than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher
density, better performance and lower power consumption.
Distinctive Characteristics
Single 3V read/program/erase (2.7-3.6 V)
Enhanced VersatileI/O control
– All input levels (address, control, and DQ input levels) and outputs
are determined by voltage on V
IO
input. V
IO
range is 1.65 to V
CC
90 nm MirrorBit process technology
8-word/16-byte page read buffer
32-word/64-byte write buffer reduces overall programming
time for multiple-word updates
Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number
– Can be programmed and locked at the factory or by the customer
Uniform 64Kword/128KByte Sector Architecture
– S29GL01GP: One thousand twenty-four sectors
– S29GL512P: Five hundred twelve sectors
– S29GL256P: Two hundred fifty-six sectors
– S29GL128P: One hundred twenty-eight sectors
100,000 erase cycles per sector typical
20-year data retention typical
Offered Packages
– 56-pin TSOP
– 64-ball Fortified BGA
Suspend and Resume commands for Program and Erase
operations
Write operation status bits indicate program and erase
operation completion
Unlock Bypass Program command to reduce programming
time
Support for CFI (Common Flash Interface)
Persistent and Password methods of Advanced Sector
Protection
WP#/ACC input
– Accelerates programming time (when V
ACC
is applied) for greater
throughput during system production
– Protects first or last sector regardless of sector protection settings
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or erase
cycle completion
Performance Characteristics
* Access times are dependent on V
CC
and V
IO
operating ranges.
See
Ordering Information
page for further details.
V1: V
CC
= 3.0–3.6 V. V2: V
CC
= V
IO
= 2.7–3.6 V.
V3: V
IO
= 1.65–V
CC
, V
CC
= 3 V.
** Contact a sales representative for availability.
S29GL-P MirrorBit
TM
Flash Family
S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gigabit, 512 Megabit , 256 Megabit and 128 Megabit
3.0 Volt-only Page Mode Flash Memory featuring
90 nm MirrorBit Process Technology
Data Sheet
(Advance Information)
Max. Read Access Times (ns)*
Parameter
512/256/128 Mb**
1 Gb
V1
V2
V3
V1
V2
V3
Random Access Time (t
ACC
)
100
110
120
110
120
130
Page Access Time (t
PACC
)
25
25
25
25
25
25
CE# Access Time (t
CE
)
110
110
120
110
120
130
OE# Access Time (t
OE
)
25
25
30
25
25
30
Current Consumption (typical values)
Random Access Read
30 mA
8-Word Page Read
1 mA
Program/Erase
50 mA
Standby
1 μA
Program & Erase Times (typical values)
Single Word Programming
60 μs
Effective Write Buffer Programming (V
CC
) Per Word
15 μs
Effective Write Buffer Programming (V
ACC
) Per Word
15 μs
Sector Erase Time (64 Kword Sector)
0.5 s
相關(guān)PDF資料
PDF描述
S29GL01GP13FAI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI013 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI020 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI022 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI023 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL01GP13FAI012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI020 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI022 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP13FAI023 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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