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參數(shù)資料
| 型號： | S29GL01GP13FAI010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 63/71頁 |
| 文件大?。?/td> | 990K |
| 代理商： | S29GL01GP13FAI010 |
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November21,2006 S29GL-P_00_A3
S29GL-P MirrorBit
TM
Flash Family
61
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
12. Appendix
This section contains information relating to software control or interfacing with the Flash device. For
additional information and assistance regarding software, see
Section 5.
For the latest information, explore
the Spansion web site at
www.spansion.com
.
12.1
Command Definitions
Writing specific address and data commands or sequences into the command register initiates device
operations. Tables
12.1
–
12.4
define the valid register command sequences.
Writing incorrect address and
data values or writing them in the improper sequence can place the device in an unknown state.
A reset
command is then required to return the device to reading array data.
Legend
X = Don’t care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of the WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A
max
–A16 uniquely select any sector.
WBL = Write Buffer Location. The address must be within the same write buffer page as PA.
WC = Word Count is the number of write buffer locations to load minus 1.
Notes
1. See
Table 7.1 on page 14
for description of bus operations.
2. All values are in hexadecimal.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
5. Address bits A
MAX
:A16 are don’t cares for unlock and command cycles, unless SA or PA required. (A
MAX
is the Highest Address pin.).
6. No unlock or command cycles required when reading array data.
Table 12.1
S29GL-P Memory Array Command Definitions, x16
Command (Notes)
C
Bus Cycles (Notes
1
–
5
)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read
(6)
1
RA
RD
Reset
(7)
1
XXX
F0
A
8
,
9
)
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
01
Device ID
(8)
4
555
AA
2AA
55
555
90
X01
227E
X0E
(8)
X0F
(8)
Sector Protect Verify
(10)
4
555
AA
2AA
55
555
90
[SA]X02
(10)
Secure Device Verify
(11)
4
555
AA
2AA
55
555
90
X03
(11)
CFI Query
(12)
1
55
98
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer
3
555
AA
2AA
55
SA
25
SA
WC
WBL
PD
WBL
PD
Program Buffer to Flash (Confirm)
1
SA
29
Write-to-Buffer-Abort Reset
(13)
3
555
AA
2AA
55
555
F0
U
Enter
3
555
AA
2AA
55
555
20
Program
(14)
2
XXX
A0
PA
PD
Sector Erase
(14)
2
XXX
80
SA
30
Chip Erase
(14)
2
XXX
80
XXX
10
Reset
(15)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend/Program Suspend
(16)
1
XXX
B0
Erase Resume/Program Resume
(17)
1
XXX
30
Secured Silicon Sector Entry
3
555
AA
2AA
55
555
88
Secured Silicon Sector Exit
(18)
4
555
AA
2AA
55
555
90
XX
00
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL01GP13FAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP13FAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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