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參數(shù)資料
| 型號： | S29GL01GP13FAI010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 64/71頁 |
| 文件大?。?/td> | 990K |
| 代理商： | S29GL01GP13FAI010 |
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62
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November21,2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high (while the device is providing status
data).
8. See
Table 7.2 on page 17
for device ID values and definitions.
9. The fourth, fifth, and sixth cycles of the autoselect command sequence are read cycles.
10.The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more information. This is same as PPB
Status Read except that the protect and unprotect statuses are inverted here.
11.The data value for DQ7 is “1” for a serialized, protected Secured Silicon Sector region and “0” for an unserialized, unprotected region. See
Table 7.3 on page 17
for data and definitions.
12.Command is valid when device is ready to read array data or when device is in autoselect mode.
13.Command sequence returns device to reading array after being placed in a Write-to-Buffer-Abort state. Full command sequence is required if resetting out of
abort while in Unlock Bypass mode.
14.The Unlock-Bypass command is required prior to the Unlock-Bypass-Program command.
15.The Unlock-Bypass-Reset command is required to return to reading array data when the device is in the unlock bypass mode.
16.The system can read and program/program suspend in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase
Suspend command is valid only during a sector erase operation.
17.The Erase Resume/Program Resume command is valid only during the Erase Suspend/Program Suspend modes.
18.The Exit command returns the device to reading the array.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL01GP13FAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP13FAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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