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| 型號(hào)： | S29CD032G0PFAN010 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY |
| 中文描述： | 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80 |
| 文件頁(yè)數(shù)： | 88/93頁(yè) |
| 文件大?。?/td> | 1608K |
| 代理商： | S29CD032G0PFAN010 |
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88
S29CD032G
30606B0 March 22, 2004
A d v a n c e I n f o r m a t i o n
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 2.5 V V
CC
, 100K cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 145°C, V
CC
= 2.5 V, 1M cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Tables 19 and 20 for further information on command definitions.
6. PPBs have a program/erase cycle endurance of 100 cycles.
Latchup Characteristics
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
PQFP and Fortified BGA Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note
2)
Unit
Comments
Sector Erase Time
1.0
5
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
23
230
s
Double Word Program Time
18
250
μs
Excludes system level
overhead (Note 5)
Accelerated Double Word Program Time
8
130
μs
Accelerated Chip Program Time
5
50
s
Chip Program Time
(Note 3)
x32
12
120
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, ACC, and WP#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
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