參數(shù)資料
型號(hào)： S29CD032G0PFAN010
廠商： SPANSION LLC
元件分類(lèi)： DRAM
英文描述： CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
中文描述： 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
封裝： 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件頁(yè)數(shù)： 2/93頁(yè)
文件大?。?/td> 1608K
代理商： S29CD032G0PFAN010
2
S29CD032G
30606B0 March 22, 2004
A d v a n c e I n f o r m a t i o n
General Description
The S29CD032G is a 32 Megabit, 2.5 Volt-only single power supply burst mode
flash memory device. The device can be configured for 1,048,576 double words.
The device can also be programmed in standard EPROM programmers.
To eliminate bus contention, each device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls. Additional control inputs are re-
quired for synchronous burst operations: Load Burst Address Valid (ADV#), and
Clock (CLK).
Each device requires only a
single 2.5 or 2.6 Volt power supply
(2.5 V to 2.75
V) for both read and write functions. A 12.0-volt V
PP
is not required for program
or erase operations, although an acceleration pin is available if faster program-
ming performance is required.
The device is entirely command set compatible with the
JEDEC single-power-
supply Flash standard
. The software command set is compatible with the com-
mand sets of the 5 V Am29F and 3 V Am29LV Flash families. Commands are
written to the command register using standard microprocessor write timing.
Register contents serve as inputs to an internal state-machine that controls the
erase and programming circuitry. Write cycles also internally latch addresses and
data needed for the programming and erase operations. Reading data out of the
device is similar to reading from other Flash or EPROM devices.
The
Unlock Bypass
mode facilitates faster programming times by requiring only
two write cycles to program data instead of four.
The
Simultaneous Read/Write architecture
provides simultaneous operation
by dividing the memory space into two banks. The device can begin programming
or erasing in one bank, and then simultaneously read from the other bank, with
zero latency. This releases the system from waiting for the completion of program
or erase operations. See Simultaneous Read/Write Operations Overview and Re-
strictions on page 13.
The device provides a 256-byte
SecSi (Secured Silicon) Sector
with an one-
time-programmable (OTP) mechanism.
In addition, the device features several levels of sector protection, which can dis-
able both the program and erase operations in certain sectors or sector groups:
Persistent Sector Protection
is a command sector protection method that re-
places the old 12 V controlled protection method;
Password Sector Protection
is a highly sophisticated protection method that requires a password before
changes to certain sectors or sector groups are permitted;
WP# Hardware Pro-
tection
prevents program or erase in the two outermost 8 Kbytes sectors of the
larger bank.
The device defaults to the Persistent Sector Protection mode. The customer must
then choose if the Standard or Password Protection method is most desirable. The
WP# Hardware Protection feature is always available, independent of the other
protection method chosen.
The
VersatileI/O (V
CCQ
)
feature allows the output voltage generated on the
device to be determined based on the V
IO
level. This feature allows this device to
operate in the 1.8 V I/O environment, driving and receiving signals to and from
other 1.8 V devices on the same bus.
The host system can detect whether a program or erase operation is complete by
observing the RY/BY# pin, by reading the DQ7 (Data# Polling), or DQ6 (toggle)
相關(guān)PDF資料
PDF描述
S29CD032G0PFAN012 CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
S29CD032G0PFAN013 CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
S29CD032G0PQAI000 CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
S29CD032G0PQAI002 CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
S29CD032G0PQAI003 CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29CD032J0MQAN010 制造商:Spansion 功能描述:
S29CD032J0MQFM010U 制造商:Spansion 功能描述:N/A - Trays
S29CD032J0PFAM010 制造商:Spansion 功能描述:
S29CD032J0PQFI010 制造商:Spansion 功能描述:AUTO 3.3V 512KX32 FLASH - Trays
S29CL016J0JQFM030 制造商:Spansion 功能描述:FLASH PARALLEL 3.3V 16MBIT 512KX32 54NS 80PQFP - Trays
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*