參數(shù)資料
型號(hào)： S29CD032G0PFAN010
廠商： SPANSION LLC
元件分類： DRAM
英文描述： CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
中文描述： 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
封裝： 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件頁(yè)數(shù)： 47/93頁(yè)
文件大?。?/td> 1608K
代理商： S29CD032G0PFAN010
March 22, 2004 30606B0
S29CD032G
47
A d v a n c e I n f o r m a t i o n
a timing defined by the Configuration Register definition. The Burst read cycle
consists of an address phase and a corresponding data phase.
During the address phase, the Address Valid (ADV#) pin is asserted (taken Low)
for one clock period. Together with the edge of the CLK, the starting burst address
is loaded into the internal Burst Address Counter. The internal Burst Address
Counter can be configured to either the Linear modes (See “Initial Access Delay
Configuration”).
During the data phase, the first burst data is available after the initial access time
delay defined in the Configuration Register. For subsequent burst data, every ris-
ing (or falling) edge of the CLK will trigger the output data with the burst output
delay and sequence defined in the Configuration Register.
Tables 19–20 show all the commands executed by the device. The device auto-
matically powers up in the read/reset state. It is not necessary to issue a read/
reset command after power-up or hardware reset.
Read/Reset Command
After power-up or hardware reset, the device automatically enter the read state.
It is not necessary to issue the reset command after power-up or hardware reset.
Standard microprocessor cycles retrieve array data, however, after power-up,
only asynchronous accesses are permitted since the Configuration Register is at
its reset state with burst accesses disabled.
The Reset command is executed when the user needs to exit any of the other user
command sequences (such as autoselect, program, chip erase, etc.) to return to
reading array data. There is no latency between executing the Reset command
and reading array data.
The Reset command does not disable the SecSi sector if it is enabled. This func-
tion is only accomplished by issuing the SecSi Sector Exit command.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters
memory contents. As such, manufacturer and device codes must be accessible
while the device resides in the target system. PROM programmers typically ac-
cess the signature codes by raising A9 to V
ID
. However, multiplexing high voltage
onto the address lines is not generally desired system design practice.
The device contains an Autoselect Command operation to supplement traditional
PROM programming methodology. The operation is initiated by writing the Au-
toselect command sequence into the command register. The bank address (BA)
is latched during the autoselect command sequence write operation to distinguish
which bank the Autoselect command references. Reading the other bank after the
Autoselect command is written results in reading array data from the other bank
and the specified address. Following the command write, a read cycle from ad-
dress (BA)XX00h retrieves the manufacturer code of (BA)XX01h. Three
sequential read cycles at addresses (BA) XX01h, (BA) XX0Eh, and (BA) XX0Fh
read the three-byte device ID (see Table 19).
(The Autoselect Command requires the user to execute the Read/Reset command
to return the device back to reading the array contents.)
Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is
initiated by writing two unlock write cycles, followed by the program set-up com-
相關(guān)PDF資料
PDF描述
S29CD032G0PFAN012 CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
S29CD032G0PFAN013 CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
S29CD032G0PQAI000 CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
S29CD032G0PQAI002 CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
S29CD032G0PQAI003 CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29CD032J0MQAN010 制造商:Spansion 功能描述:
S29CD032J0MQFM010U 制造商:Spansion 功能描述:N/A - Trays
S29CD032J0PFAM010 制造商:Spansion 功能描述:
S29CD032J0PQFI010 制造商:Spansion 功能描述:AUTO 3.3V 512KX32 FLASH - Trays
S29CL016J0JQFM030 制造商:Spansion 功能描述:FLASH PARALLEL 3.3V 16MBIT 512KX32 54NS 80PQFP - Trays
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*