參數(shù)資料
型號(hào): S29CD032G0PFAN010
廠商: SPANSION LLC
元件分類(lèi): DRAM
英文描述: CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
中文描述: 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
封裝: 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件頁(yè)數(shù): 52/93頁(yè)
文件大?。?/td> 1608K
代理商: S29CD032G0PFAN010
52
S29CD032G
30606B0 March 22, 2004
A d v a n c e I n f o r m a t i o n
dow has expired. The status of the sector erase operation is determined three
ways:
Data# polling of the DQ7 pin
Checking the status of the toggle bit DQ6
Checking the status of the RY/BY# pin
Further status of device activity during the sector erase operation is determined
using toggle bit DQ2 (refer to
DQ2: Toggle Bit II
).
When the Embedded Erase algorithm is complete, the device returns to reading
array data, and addresses are no longer latched. Note that an address change is
required to begin read valid array data.
Figure 5 illustrates the Embedded Erase Algorithm, using a typical command
sequence and bus operation. Refer to the
Erase/Program Operations
tables in the
AC Characteristics
section for parameters, and to Figures 21 and 22 for timing
diagrams.
Sector Erase and Program Suspend Command
The Sector Erase and Program Suspend command allows the user to interrupt a
Sector Erase or Program operation and perform data read or programs in a sector
that is not being erased or to the sector where a programming operation was ini-
tiated. This command is applicable only during the Sector Erase and
Programming operation, which includes the time-out period for Sector Erase.
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Tables 19 and 20 for erase command sequence.
2. See
DQ3: Sector Erase Timer
for more information.
Figure 5. Erase Operation
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