參數(shù)資料
型號: S29CD032G0PFAN010
廠商: SPANSION LLC
元件分類: DRAM
英文描述: CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
中文描述: 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
封裝: 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件頁數(shù): 34/93頁
文件大?。?/td> 1608K
代理商: S29CD032G0PFAN010
34
S29CD032G
30606B0 March 22, 2004
A d v a n c e I n f o r m a t i o n
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = V
IL
, CE# = V
IH
, or WE#
= V
IH
. To initiate a write cycle, CE# and WE# must be a logical zero (V
IL
) while
OE# is a logical one (V
IH
).
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power-up, the device does not accept
commands on the rising edge of WE#. The internal state machine is automatically
reset to reading array data on power-up.
V
CC
and V
IO
Power-up And Power-down Sequencing
The device imposes no restrictions on V
CC
and V
IO
power-up or power-down se-
quencing. Asserting RESET# to V
IL
is required during the entire V
CC
and V
IO
power sequence until the respective supplies reach their operating voltages.
Once, V
CC
and V
IO
attain their respective operating voltages, de-assertion of RE-
SET# to V
IH
is permitted.
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