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| 型號(hào)： | MT48LC8M8A2TG-8EL:GIT |
| 元件分類： | DRAM |
| 英文描述： | 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 24/55頁 |
| 文件大?。?/td> | 1454K |
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64Mb: x4, x8, x16 SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64MSDRAM.pmd – Rev. H; Pub. 12/04
2002 Micron Technology, Inc. All rights reserved.
64Mb: x4, x8, x16
SDRAM
TRUTH TABLE 4 – CURRENT STATE BANK n, COMMAND TO BANK m
(Notes: 1-6; notes appear below and on next page)
CURRENT STATE CS# RAS# CAS# WE#
COMMAND (ACTION)
NOTES
Any
H
X
COMMAND INHIBIT (NOP/Continue previous operation)
L
H
NO OPERATION (NOP/Continue previous operation)
Idle
X
Any Command Otherwise Allowed to Bank m
Row
L
H
ACTIVE (Select and activate row)
Activating,
L
H
L
H
READ (Select column and start READ burst)
7
Active, or
L
H
L
WRITE (Select column and start WRITE burst)
7
Precharging
L
H
L
PRECHARGE
Read
L
H
ACTIVE (Select and activate row)
(Auto
L
H
L
H
READ (Select column and start new READ burst)
7, 10
Precharge
L
H
L
WRITE (Select column and start WRITE burst)
7, 11
Disabled)
L
H
L
PRECHARGE
9
Write
L
H
ACTIVE (Select and activate row)
(Auto
L
H
L
H
READ (Select column and start READ burst)
7, 12
Precharge
L
H
L
WRITE (Select column and start new WRITE burst)
7, 13
Disabled)
L
H
L
PRECHARGE
9
Read
L
H
ACTIVE (Select and activate row)
(With Auto
L
H
L
H
READ (Select column and start new READ burst)
7, 8, 14
Precharge)
L
H
L
WRITE (Select column and start WRITE burst)
7, 8, 15
L
H
L
PRECHARGE
9
Write
L
H
ACTIVE (Select and activate row)
(With Auto
L
H
L
H
READ (Select column and start READ burst)
7, 8, 16
Precharge)
L
H
L
WRITE (Select column and start new WRITE burst)
7, 8, 17
L
H
L
PRECHARGE
9
NOTE:
1. This table applies when CKE
n-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after
tXSR has been met (if the
previous state was self refresh).
2. This table describes alternate bank operation, except where noted; i.e., the current state is for bank n and the
commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given
command is allowable). Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and
no register accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated
or been terminated.
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet
terminated or been terminated.
Read w/Auto
Precharge Enabled: Starts with registration of a READ command with auto precharge enabled, and ends when
tRP has been met. Once tRP is met, the bank will be in the idle state.
Write w/Auto
Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled, and ends when
tRP has been met. Once tRP is met, the bank will be in the idle state.
(Continued on next page)
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| MT48LCM32B2P | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SDR SDRAM MT48LC2M32B2 a?? 512K x 32 x 4 Banks |
| MT48NN | 功能描述:插線板 48POS AUDIO PATCHBAY RoHS:否 制造商:Switchcraft 產(chǎn)品類型:Bantam (TT) 正規(guī)化: 高度/機(jī)架數(shù)量: 深度: 端接類型: 位置/觸點(diǎn)數(shù)量:48 |
| MT48NNX | 功能描述:插線板 48POS AUDIO PATCHBAY RoHS:否 制造商:Switchcraft 產(chǎn)品類型:Bantam (TT) 正規(guī)化: 高度/機(jī)架數(shù)量: 深度: 端接類型: 位置/觸點(diǎn)數(shù)量:48 |
| MT48NS | 功能描述:插線板 1 RU PANEL 48 LF JA RoHS:否 制造商:Switchcraft 產(chǎn)品類型:Bantam (TT) 正規(guī)化: 高度/機(jī)架數(shù)量: 深度: 端接類型: 位置/觸點(diǎn)數(shù)量:48 |
| MT48NSX | 功能描述:插線板 1/4" LF SLDR BAY 1RU, 2X24, NORM STR RoHS:否 制造商:Switchcraft 產(chǎn)品類型:Bantam (TT) 正規(guī)化: 高度/機(jī)架數(shù)量: 深度: 端接類型: 位置/觸點(diǎn)數(shù)量:48 |
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