參數(shù)資料
型號(hào)： MT48LC8M8A2TG-8EL:GIT
元件分類(lèi)： DRAM
英文描述： 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝： 0.400 INCH, PLASTIC, TSOP2-54
文件頁(yè)數(shù)： 16/55頁(yè)
文件大?。?/td> 1454K
23
64Mb: x4, x8, x16 SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64MSDRAM.pmd – Rev. H; Pub. 12/04
2002 Micron Technology, Inc. All rights reserved.
64Mb: x4, x8, x16
SDRAM
Fixed-length or full-page WRITE bursts can be trun-
cated with the BURST TERMINATE command. When
truncating a WRITE burst, the input data applied coin-
cident with the BURST TERMINATE command will be
ignored. The last data written (provided that DQM is
LOW at that time) will be the input data applied one
clock previous to the BURST TERMINATE command.
This is shown in Figure 19, where data n is the last
desired data element of a longer burst.
Figure 21
Power-Down
DON’T CARE
tRAS
tRCD
tRC
All banks idle
Input buffers gated off
Exit power-down mode.
(
)
(
)
(
)
(
)
(
)
(
)
tCKS
> tCKS
COMMAND
NOP
ACTIVE
Enter power-down mode.
NOP
CLK
CKE
(
)
(
)
(
)
(
)
Figure 20
PRECHARGE Command
Figure 19
Terminating a WRITE Burst
CS#
WE#
CAS#
RAS#
CKE
CLK
A10
HIGH
All Banks
Bank Selected
A0-A9
BA0,1
BANK
ADDRESS
PRECHARGE
The PRECHARGE command (Figure 20) is used to
deactivate the open row in a particular bank or the
open row in all banks. The bank(s) will be available for
a subsequent row access some specified time (tRP) af-
ter the PRECHARGE command is issued. Input A10
determines whether one or all banks are to be
precharged, and in the case where only one bank is to
be precharged, inputs BA0, BA1 select the bank. When
all banks are to be precharged, inputs BA0, BA1 are
treated as “Don’t Care.” Once a bank has been
precharged, it is in the idle state and must be activated
prior to any READ or WRITE commands being issued to
that bank.
POWER-DOWN
Power-down occurs if CKE is registered LOW coinci-
dent with a NOP or COMMAND INHIBIT when no ac-
cesses are in progress. If power-down occurs when all
banks are idle, this mode is referred to as precharge
power-down; if power-down occurs when there is a row
active in any bank, this mode is referred to as active
power-down. Entering power-down deactivates the in-
put and output buffers, excluding CKE, for maximum
power savings while in standby. The device may not
remain in the power-down state longer than the re-
fresh period (64ms) since no refresh operations are
performed in this mode.
The power-down state is exited by registering a NOP
or COMMAND INHIBIT and CKE HIGH at the desired
clock edge (meeting tCKS). See Figure 21.
DON’T CARE
CLK
DQ
T2
T1
T0
COMMAND
ADDRESS
BANK,
COL n
WRITE
BURST
TERMINATE
NEXT
COMMAND
DIN
n
(ADDRESS)
(DATA)
NOTE: DQMs are LOW.
TRANSITIONING DATA
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