參數(shù)資料
型號: MT47H64M16HQ-3IT:G
元件分類: DRAM
英文描述: 64M X 16 DDR DRAM, 0.4 ns, PBGA60
封裝: ROHS COMPLAINT, PLASTIC, FBGA-60
文件頁數(shù): 55/135頁
文件大小: 9307K
Electrical Specifications – Idd Parameters
Idd Specifications and Conditions
Table 8: General Idd Parameters
Idd Parameters
-187E
-25E
-25
-3E
-3
-37E
-5E
Units
CL (Idd)
7
5
6
4
5
4
3
tCK
tRCD (Idd)
13.125
12.5
15
12
15
ns
tRC (Idd)
58.125
57.5
60
57
60
55
ns
tRRD (Idd) - x4/x8 (1KB)
7.5
ns
tRRD (Idd) - x16 (2KB)
10
ns
tCK (Idd)
1.875
2.5
3
3.75
5
ns
tRAS MIN (Idd)
45
40
ns
tRAS MAX (Idd)
70,000
ns
tRP (Idd)
13.125
12.5
15
12
15
ns
tRFC (Idd - 256Mb)
75
ns
tRFC (Idd - 512Mb)
105
ns
tRFC (Idd - 1Gb)
127.5
ns
tRFC (Idd - 2Gb)
195
ns
tFAW (Idd) - x4/x8 (1KB)
Defined by pattern in Table 9 (page 27)
ns
tFAW (Idd) - x16 (2KB)
Defined by pattern in Table 9 (page 27)
ns
1Gb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Idd Parameters
PDF: 09005aef821ae8bf
Rev. P 1/09 EN
26
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT47H64M16HQ-3L 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM