參數(shù)資料
型號(hào): MT47H64M16HQ-3IT:G
元件分類: DRAM
英文描述: 64M X 16 DDR DRAM, 0.4 ns, PBGA60
封裝: ROHS COMPLAINT, PLASTIC, FBGA-60
文件頁數(shù): 104/135頁
文件大?。?/td> 9307K
Commands
Truth Tables
The following tables provide a quick reference of available DDR2 SDRAM commands,
including CKE power-down modes and bank-to-bank commands.
Table 36: Truth Table – DDR2 Commands
Notes: 1–3 apply to the entire table
Function
CKE
CS#
RAS# CAS# WE#
BA2–
BA0
An
A11
A10
A9–A0 Notes
Previous
Cycle
Current
Cycle
LOAD MODE
H
L
BA
OP code
REFRESH
H
L
H
X
SELF REFRESH entry
H
L
H
X
SELF REFRESH exit
L
H
X
L
H
Single bank
PRECHARGE
H
L
H
L
BA
X
L
X
All banks PRECHARGE
H
L
H
L
X
H
X
Bank ACTIVATE
H
L
H
BA
Row address
WRITE
H
L
H
L
BA
Column
address
L
Column
address
WRITE with auto
precharge
H
L
H
L
BA
Column
address
H
Column
address
READ
H
L
H
L
H
BA
Column
address
L
Column
address
READ with auto
precharge
H
L
H
L
H
BA
Column
address
H
Column
address
NO OPERATION
H
X
L
H
X
Device DESELECT
H
X
H
X
Power-down entry
H
L
H
X
L
H
Power-down exit
L
H
X
L
H
Notes: 1. All DDR2 SDRAM commands are defined by states of CS#, RAS#, CAS#, WE#, and CKE at
the rising edge of the clock.
2. The state of ODT does not affect the states described in this table. The ODT function is
not available during self refresh. See ODT Timing (page 129) for details.
3.
“X” means “H or L” (but a defined logic level) for valid Idd measurements.
4. BA2 is only applicable for densities
≥1Gb.
1Gb: x4, x8, x16 DDR2 SDRAM
Commands
PDF: 09005aef821ae8bf
Rev. P 1/09 EN
70
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT47H64M16HQ-3L 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM