參數(shù)資料
型號: MC145225
廠商: Motorola, Inc.
英文描述: Dual PLL Frequency Synthesizers With DACs and Voltage Multipliers(帶DACs和電壓乘法器的雙PLL頻率合成器)
中文描述: 雙鎖相環(huán)頻率合成器與DAC和電壓倍增器(帶數(shù)模轉(zhuǎn)換器和電壓乘法器的雙鎖相環(huán)頻率合成器)
文件頁數(shù): 4/71頁
文件大小: 906K
代理商: MC145225
MC145225 MC145230
4
MOTOROLA RF/IF DEVICE DATA
2. PIN CONNECTIONS
Output
A
This device contains 15,260 active transistors.
Vpos
25
32
31
30
29
28
27
26
24
23
22
21
20
19
18
17
Output
B
Vpos
fout/
Pol
fout/
Pol
Vpos
fin
Gnd
Oscb
PDout
Creg
Cmult
PDout–Lo
PDout–Hi
Gnd
Rx
16
Output
C
15
Gnd
14
Gnd
13
fin
12
fin
11
Vpos
10
Mode
9
1
2
3
4
5
6
7
8
Osce
DAC Vpos
DAC1
DAC2
Enb
Din
Clk
LD
3. PARAMETER TABLES
3A. MAXIMUM RATINGS
(Voltages Referenced to Gnd, unless otherwise stated)
Parameter
Symbol
Value
Unit
DC Supply Voltages
Vpos,
DAC Vpos
–0.5 to 3.6
V
DC Input Voltage — Osce, fin, fin, Mode,
Din, Clk, Enb, fout/Pol , fout/Pol
Vin
–0.5 to Vpos + 0.5
V
DC Output Voltage
Vout
Iin
Iout
I
–0.5 to Vpos + 0.5
±
10
V
DC Input Current, per Pin
mA
DC Output Current, per Pin
±
20
mA
DC Supply Current, Vpos and Gnd Pins
Power Dissipation, per Package
25
mA
PD
Tstg
TL
100
mW
Storage Temperature
–65 to 150
°
C
Lead Temperature, 1 mm from Case for
10 Seconds
260
°
C
NOTES:
1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Electrical Characteristics tables
or Pin Descriptions section.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) up to 2000 V.
Additional ESD data available upon request.
This device contains protection circuitry to
guard against damage due to high static volt-
ages or electric fields. However, precautions
must be taken to avoid applications of any
voltage higher than maximum rated voltages
to this high–impedance circuit.
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