參數(shù)資料
型號(hào)： M30L0R8000B0ZAQF
廠商： 意法半導(dǎo)體
英文描述： CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 56/83頁(yè)
文件大?。?/td> 1363K
代理商： M30L0R8000B0ZAQF
M30L0R8000T0, M30L0R8000B0
56/83
PART NUMBERING
Table 29. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device,
please contact the ST Sales Office nearest to you.
Example:
M30 L 0 R 8 0 0 0 T 0 ZAQT
Device Type
M30 = Multiple Flash Chip Package
Flash Device Identifier 1
L = Multi-Level, Multiple Bank, Burst Mode
Flash Device Identifier 2
0 = no other architecture
Operating Voltage
R = V
DD
=
1.7V to 2.0V, V
DDQ
= 1.7V to 2.0V
Flash 1 Density
8 = 256 Mbit
Flash 2 Density
0 = No Die
Flash 3 Density
0 = No Die
Flash 4 Density
0 = No Die
Parameter Block Location
T = Top Boot
B = Bottom Boot
Product Version
0 = 0.13μm Technology Multi-Level Design
Package
ZAQ = TFBGA88 8x10mm, 0.8mm pitch, quadruple stacked footprint
Packing Option
Blank = Standard Packing
T = Tape & Reel Packing
E = Lead-Free and RoHS Package, Standard Packing
F = Lead-Free and RoHS Package, Tape & Reel Packing
相關(guān)PDF資料
PDF描述
M30L0R8000B0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30LW128D 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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