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參數(shù)資料
| 型號(hào)： | M30L0R8000B0ZAQF |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014 |
| 中文描述： | 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 35/83頁 |
| 文件大?。?/td> | 1363K |
| 代理商： | M30L0R8000B0ZAQF |
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M30L0R8000T0, M30L0R8000B0
DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE
The
Multiple
Bank
Architecture
M30L0R8000x0 gives greater flexibility for soft-
ware developers to split the code and data spaces
within the memory array. The Dual Operations fea-
ture simplifies the software management of the de-
vice by allowing code to be executed from one
bank while another bank is being programmed or
erased.
The Dual Operations feature means that while pro-
gramming or erasing in one bank, read operations
are possible in another bank with zero latency
(only one bank at a time is allowed to be in pro-
gram or erase mode).
If a read operation is required in a bank, which is
programming or erasing, the program or erase op-
eration can be suspended.
Also if the suspended operation was erase then a
program command can be issued to another
of
the
block, so the device can have one block in Erase
Suspend mode, one programming and other
banks in read mode.
Bus Read operations are allowed in another bank
between setup and confirm cycles of program or
erase operations.
By using a combination of these features, read op-
erations are possible at any moment in the
M30L0R8000x0 device.
Dual operations between the Parameter Bank and
either of the CFI, the OTP or the Electronic Signa-
ture memory space are not allowed.
Table 15.
shows which dual operations are allowed or not
between the CFI, the OTP, the Electronic Signa-
ture locations and the memory array.
Tables
13
and
14
show the dual operations possi-
ble in other banks and in the same bank.
Table 13. Dual Operations Allowed In Other Banks
Table 14. Dual Operations Allowed In Same Bank
Note: 1. Not allowed in the Word that is being erased or programmed.
2. The Read Array command is accepted but the data output is not guaranteed until the Program or Erase has completed.
Status of bank
Commands allowed in another bank
Read
Array
Read
Status
Register
Read
CFI
Query
Read
Electronic
Signature
Program,
Buffer Program
Block
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
Yes
Yes
Yes
Yes
–
–
Yes
–
Erasing
Yes
Yes
Yes
Yes
–
–
Yes
–
Program Suspended
Yes
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
Yes
Yes
Yes
Yes
–
–
Yes
Status of bank
Commands allowed in same bank
Read
Array
Read
Status
Register
Read
CFI Query
Read
Electronic
Signature
Program,
Buffer
Program
Block
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
–
(2)
Yes
Yes
Yes
–
–
Yes
–
Erasing
–
(2)
Yes
Yes
Yes
–
–
Yes
–
Program Suspended
Yes
(1)
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
(1)
Yes
Yes
Yes
Yes
(1)
–
–
Yes
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R8000B0ZAQT | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQ | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0 | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30LW128D | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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