參數(shù)資料
型號(hào)： M30L0R8000B0ZAQF
廠商： 意法半導(dǎo)體
英文描述： CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 20/83頁(yè)
文件大?。?/td> 1363K
代理商： M30L0R8000B0ZAQF
M30L0R8000T0, M30L0R8000B0
20/83
■
The second Bus Write cycle latches the block
address and locks-down the block.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down.
Table 16.
shows the Lock Status af-
ter issuing a Block Lock-Down command.
Refer to the section,
BLOCK LOCKING
, for a de-
tailed explanation and
APPENDIX C.
,
Figure
25., Locking Operations Flowchart and Pseudo
Code
, for a flowchart for using the Lock-Down
command.
Table 5. Standard Commands
Note: 1. X = Don't Care, WA = Word Address in targeted bank, RD = Read Data, SRD = Status Register Data, ESD = Electronic Signature
Data, QD = Query Data, BA = Block Address, BKA = Bank Address, PD = Program Data, PRA = Protection Register Address,
PRD = Protection Register Data, CRD = Configuration Register Data.
2. Must be same bank as in the first cycle. The signature addresses are listed in
Table 7.
3. Any address within the bank can be used.
4. n+1 is the number of Words to be programmed.
Commands
C
Bus Operations
1st Cycle
2nd Cycle
Op.
Add
Data
Op.
Add
Data
Read Array
1+
Write
BKA
FFh
Read
WA
RD
Read Status Register
1+
Write
BKA
70h
Read
BKA
(2)
SRD
Read Electronic Signature
1+
Write
BKA
90h
Read
BKA
(2)
ESD
Read CFI Query
1+
Write
BKA
98h
Read
BKA
(2)
QD
Clear Status Register
1
Write
BKA
50h
Block Erase
2
Write
BKA or
BA
(3)
20h
Write
BA
D0h
Program
2
Write
BKA or
WA
(3)
40h or 10h
Write
WA
PD
Buffer Program
n+4
Write
BA
E8h
Write
BA
n
Write
PA
1
PD
1
Write
PA
2
PD
2
Write
PA
n+1
PD
n+1
Write
X
D0h
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Protection Register Program
2
Write
PRA
C0h
Write
PRA
PRD
Set Configuration Register
2
Write
CRD
60h
Write
CRD
03h
Block Lock
2
Write
BKA or
BA
(3)
60h
Write
BA
01h
Block Unlock
2
Write
BKA or
BA
(3)
60h
Write
BA
D0h
Block Lock-Down
2
Write
BKA or
BA
(3)
60h
Write
BA
2Fh
相關(guān)PDF資料
PDF描述
M30L0R8000B0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30LW128D 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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