參數(shù)資料
型號(hào): M30L0R8000B0ZAQF
廠商: 意法半導(dǎo)體
英文描述: CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014
中文描述: 256兆位(16Mb的x16插槽,多銀行,多層次,多突發(fā))1.8V電源快閃記憶體
文件頁(yè)數(shù): 22/83頁(yè)
文件大?。?/td> 1363K
代理商: M30L0R8000B0ZAQF
M30L0R8000T0, M30L0R8000B0
22/83
Figure 5. Protection Register Memory Map
AI07563
User Programmable OTP
Unique device number
Protection Register Lock
1 0
88h
85h
84h
81h
80h
User Programmable OTP
PROTECTION REGISTERS
User Programmable OTP
Protection Register Lock
1 0
4 3 2
9
7
5
13 12
10
11
8
6
14
15
PR1
PR16
PR0
89h
8Ah
91h
102h
109h
相關(guān)PDF資料
PDF描述
M30L0R8000B0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30LW128D 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory