參數(shù)資料
型號: M30L0R8000B0ZAQF
廠商: 意法半導(dǎo)體
英文描述: CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014
中文描述: 256兆位(16Mb的x16插槽,多銀行,多層次,多突發(fā))1.8V電源快閃記憶體
文件頁數(shù): 43/83頁
文件大?。?/td> 1363K
代理商: M30L0R8000B0ZAQF
43/83
M30L0R8000T0, M30L0R8000B0
Figure 10. Asynchronous Random Access Read AC Waveforms
Note: 1. Latch Enable, L, can be kept Low (also at board level) when the Latch Enable function is not required or supported.
2. Write Enable, W, is High, WAIT is active Low.
AI10590
tAVAV
tELQX
tEHQX
tGLQV
tGLQX
tGHQX
DQ0-DQ15
E
G
tELQV
tEHQZ
tGHQZ
VALID
A0-A23
VALID
VALID
L
(1)
tELLH
tLLQV
tLLLH
tAVLH
tLHAX
tAXQX
WAIT
(2)
tELTV
tEHTZ
Hi-Z
Hi-Z
tAVQV
tGLTV
tGHTZ
相關(guān)PDF資料
PDF描述
M30L0R8000B0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30LW128D 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory