參數(shù)資料
型號(hào)： M30L0R8000B0ZAQF
廠商： 意法半導(dǎo)體
英文描述： CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 36/83頁(yè)
文件大?。?/td> 1363K
代理商： M30L0R8000B0ZAQF
M30L0R8000T0, M30L0R8000B0
36/83
Table 15. Dual Operation Limitations
BLOCK LOCKING
The M30L0R8000x0 features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency. This locking
scheme has three levels of protection.
Lock/Unlock - this first level allows software
only control of block locking.
Lock-Down - this second level requires
hardware interaction before locking can be
changed.
V
PP
≤
V
PPLK
- the third level offers a complete
hardware protection against program and
erase on all blocks.
The protection status of each block can be set to
Locked, Unlocked, and Locked-Down.
Table 16.
,
defines all of the possible protection states (WP,
DQ1, DQ0), and
APPENDIX C.
,
Figure 25.
, shows
a flowchart for the locking operations.
■
■
■
Reading a Block’s Lock Status
The lock status of every block can be read in the
Read Electronic Signature mode of the device. To
enter this mode issue the Read Electronic Signa-
ture command. Subsequent reads at the address
specified in
Table 7.
, will output the protection sta-
tus of that block.
The lock status is represented by DQ0 and DQ1.
DQ0 indicates the Block Lock/Unlock status and is
set by the Lock command and cleared by the Un-
lock command. DQ0 is automatically set when en-
tering Lock-Down. DQ1 indicates the Lock-Down
status and is set by the Lock-Down command.
DQ1 cannot be cleared by software, only by a
hardware reset or power-down.
The following sections explain the operation of the
locking system.
Locked State
The default status of all blocks on power-up or af-
ter a hardware reset is Locked (states (0,0,1) or
(1,0,1)). Locked blocks are fully protected from
program or erase operations. Any program or
erase operations attempted on a locked block will
return an error in the Status Register. The Status
of a Locked block can be changed to Unlocked or
Locked-Down using the appropriate software
commands. An Unlocked block can be Locked by
issuing the Lock command.
Unlocked State
Unlocked blocks (states (0,0,0), (1,0,0) (1,1,0)),
can be programmed or erased. All unlocked
blocks return to the Locked state after a hardware
reset or when the device is powered-down. The
status of an unlocked block can be changed to
Locked or Locked-Down using the appropriate
software commands. A locked block can be un-
locked by issuing the Unlock command.
Lock-Down State
Blocks that are Locked-Down (state (0,1,x))are
protected from program and erase operations (as
for Locked blocks) but their protection status can-
not be changed using software commands alone.
A Locked or Unlocked block can be Locked-Down
by issuing the Lock-Down command. Locked-
Down blocks revert to the Locked state when the
device is reset or powered-down.
Current Status
Commands allowed
Read CFI / OTP /
Electronic Signature
Read Parameter
Blocks
Read Main Blocks
Located in
Parameter Bank
Not Located in
Parameter Bank
Programming / Erasing
Parameter Blocks
No
No
No
Yes
Programming /
Erasing Main
Blocks
Located in
Parameter
Bank
Yes
No
No
Yes
Not Located in
Parameter
Bank
Yes
Yes
Yes
In Different Bank
Only
Programming OTP
No
No
No
No
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M30L0R8000B0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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M30L0R8000T0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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參數(shù)描述
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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