參數(shù)資料
型號(hào)： M30L0R8000B0ZAQF
廠商： 意法半導(dǎo)體
英文描述： CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 18/83頁
文件大?。?/td> 1363K
代理商： M30L0R8000B0ZAQF
M30L0R8000T0, M30L0R8000B0
18/83
For optimum performance the Buffer Enhanced
Factory Program command should be limited to a
maximum of 100 program/erase cycles per block.
If this limit is exceeded the internal algorithm will
continue to work properly but some degradation in
performance is possible. Typical program times
are given in
Table 17.
See
APPENDIX C.
,
Figure 27., Buffer Enhanced
Factory Program Flowchart and Pseudo Code
, for
a suggested flowchart on using the Buffer En-
hanced Factory Program command.
Program/Erase Suspend Command
The Program/Erase Suspend command is used to
pause a Program or Block Erase operation. The
command can be addressed to any bank.
The Program/Erase Resume command is re-
quired to restart the suspended operation.
One bus write cycle is required to issue the Pro-
gram/Erase Suspend command. Once the Pro-
gram/Erase Controller has paused bits SR7, SR6
and/ or SR2 of the Status Register will be set to ‘1’.
The following commands are accepted during Pro-
gram/Erase Suspend:
–
Program/Erase Resume
–
Read Array (data from erase-suspended
block or program-suspended Word is not
valid)
–
Read Status Register
–
Read Electronic Signature
–
Read CFI Query.
Additionally, if the suspended operation was a
Block Erase then the following commands are also
accepted:
–
Clear Status Register
–
Program (except in erase-suspended
block)
–
Buffer Program (except in erase
suspended blocks)
–
Block Lock
–
Block Lock-Down
–
Block Unlock.
During an erase suspend the block being erased
can be protected by issuing the Block Lock or
Block Lock-Down commands. When the Program/
Erase Resume command is issued the operation
will complete.
It is possible to accumulate multiple suspend oper-
ations. For example: suspend an erase operation,
start a program operation, suspend the program
operation, then read the array.
If a Program command is issued during a Block
Erase Suspend, the erase operation cannot be re-
sumed until the program operation has completed.
The Program/Erase Suspend command does not
change the read mode of the banks. If the sus-
pended bank was in Read Status Register, Read
Electronic signature or Read CFI Query mode the
bank remains in that mode and outputs the corre-
sponding data.
Refer to Dual Operations section for detailed infor-
mation about simultaneous operations allowed
during Program/Erase Suspend.
During a Program/Erase Suspend, the device can
be placed in standby mode by taking Chip Enable
to V
IH
. Program/erase is aborted if Reset, RP,
goes to V
IL
.
See
APPENDIX C.
,
Figure 22., Program Suspend
& Resume Flowchart and Pseudo Code
, and
Fig-
ure 24., Erase Suspend & Resume Flowchart and
Pseudo Code
, for flowcharts for using the Pro-
gram/Erase Suspend command.
Program/Erase Resume Command
The Program/Erase Resume command is used to
restart the program or erase operation suspended
by the Program/Erase Suspend command. One
Bus Write cycle is required to issue the command.
The command can be issued to any address.
The Program/Erase Resume command does not
change the read mode of the banks. If the sus-
pended bank was in Read Status Register, Read
Electronic signature or Read CFI Query mode the
bank remains in that mode and outputs the corre-
sponding data.
If a Program command is issued during a Block
Erase Suspend, then the erase cannot be re-
sumed until the program operation has completed.
See
APPENDIX C.
,
Figure 22., Program Suspend
& Resume Flowchart and Pseudo Code
, and
Fig-
ure 24., Erase Suspend & Resume Flowchart and
Pseudo Code
, for flowcharts for using the Pro-
gram/Erase Resume command.
Protection Register Program Command
The Protection Register Program command is
used to program the user One-Time-Programma-
ble (OTP) segments of the Protection Register and
the two Protection Register Locks.
The device features 16 OTP segments of 128 bits
and one OTP segment of 64 bits, as shown in
Fig-
ure 5., Protection Register Memory Map
.
The segments are programmed one Word at a
time. When shipped all bits in the segment are set
to ‘1’. The user can only program the bits to ‘0’.
相關(guān)PDF資料
PDF描述
M30L0R8000B0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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