參數(shù)資料
型號(hào): M29W640GB70ZA6F
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 4M X 16 FLASH 3V PROM, 70 ns, PBGA48
封裝: 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48
文件頁數(shù): 87/90頁
文件大?。?/td> 849K
代理商: M29W640GB70ZA6F
Flowchart
M29W640GH, M29W640GL, M29W640GT, M29W640GB
1.
n+1 is the number of addresses to be programmed.
2.
A Write to Buffer and Program Abort and Reset must be issued to return the device in Read mode.
3.
When the block address is specified, any address in the selected block address space is acceptable. However when
loading Write Buffer address with data, all addresses must fall within the selected Write Buffer page.
4.
DQ7 must be checked since DQ5 and DQ7 may change simultaneously.
5.
If this flowchart location is reached because DQ5=’1’, then the Write to Buffer and Program command failed. If this
flowchart location is reached because DQ1=’1’, then the Write to Buffer and Program command aborted. In both cases, the
appropriate reset command must be issued to return the device in Read mode: a Reset command if the operation failed, a
Write to Buffer and Program Abort and Reset command if the operation aborted.
6.
See Table 10 and Table 11, for details on Write to Buffer and Program command sequence.
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