參數(shù)資料
型號： M29W640GB70ZA6F
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 70 ns, PBGA48
封裝： 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48
文件頁數(shù)： 74/90頁
文件大?。?/td> 849K
代理商： M29W640GB70ZA6F
Common Flash Interface (CFI)
M29W640GH, M29W640GL, M29W640GT, M29W640GB
Table 33.
Device geometry definition(1)
Address
Data
Description
Value
x16
x8
27h
4Eh
0017h
Device Size = 2n in number of bytes
8 Mbytes
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0005h
0000h
Maximum number of bytes in multi-byte program or page =
2n
32 bytes
2Ch
58h
M29W640GH,
M29W640GL
0001h Number of Erase Block Regions. It specifies the number of
regions containing contiguous Erase Blocks of the same
size.
1
M29W640GT,
M29W640GB
0002h
2
2Dh
2Eh
5Ah
5Ch
M29W640GH,
M29W640GL
007Fh
0000h
Region 1 Information
Number of Erase Blocks of identical size = 007Fh+1
128
2Fh
30h
5Eh
60h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64Kbytes
2Dh
2Eh
5Ah
5Ch
M29W640GT,
M29W640GB
0007h
0000h
Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
8
2Fh
30h
5Eh
60h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8Kbyte
31h
32h
62h
64h
M29W640GT,
M29W640GB
only
007Eh
0000h
Region 2 Information
Number of Erase Blocks of identical size= 007Eh+1
127
33h
34h
66h
68h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64Kbytes
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
Region 3 Information
Number of Erase Blocks of identical size=007Fh+1
Region 3 Information
Block size in Region 3 = 0000h * 256 byte
0
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
Region 4 Information
Number of Erase Blocks of Identical size=007Fh+1
Region 4 Information
Block size in Region 4 = 0000h * 256 byte
0
1.
For Bottom Boot devices, Erase Block Region 1 is located from address 000000h to 007FFFh and Erase Block Region 2
from address 008000h to 3FFFFFh.
For Top Boot devices, Erase Block Region 1 is located from address 000000h to 3F7FFFh and Erase Block Region 2 from
address 3F8000h to 3FFFFFh.
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相關代理商/技術參數(shù)
參數(shù)描述
M29W640GB70ZF3F 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M29W640GB70ZF3F TR 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 64TBGA
M29W640GB70ZF6E 功能描述:IC FLASH 64MBIT 70NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應商設備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8
M29W640GB70ZS6E 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays 制造商:Micron Technology Inc 功能描述:64MBIT PARALLEL NOR FLASH 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 64FBGA
M29W640GB70ZS6F 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel
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