參數(shù)資料
型號(hào): M29W640GB70ZA6F
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 4M X 16 FLASH 3V PROM, 70 ns, PBGA48
封裝: 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48
文件頁(yè)數(shù): 42/90頁(yè)
文件大?。?/td> 849K
代理商: M29W640GB70ZA6F
M29W640GH, M29W640GL, M29W640GT, M29W640GB
DC and ac parameters
47/90
1.
Sampled only, not 100% tested.
Table 16.
Device capacitance
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Output Capacitance
VOUT = 0V
12
pF
Table 17.
DC characteristics
Symbol
Parameter
Test Condition
Min
Max
Unit
ILI
(1)
1.
The maximum input leakage current is
± 5A on the VPP/WP pin.
Input Leakage Current
0V
≤ V
IN ≤ VCC
±1
A
ILO
Output Leakage Current
0V
≤ V
OUT ≤ VCC
±1
A
ICC1
Supply Current (Read)
E = VIL, G = VIH,
f = 6MHz
10
mA
ICC2
Supply Current (Standby)
E = VCC ±0.2V,
RP = VCC ±0.2V
100
A
ICC3
Supply Current
(Program/Erase)
Program/Erase
Controller active
VPP/WP =
VIL or VIH
20
mA
VPP/WP = VPP
20
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7VCC
VCC +0.3
V
VPP
Voltage for VPP/WP
Program Acceleration
VCC = 2.7V ±10%
11.5
12.5
V
IPP
Current for VPP/WP
Program Acceleration
VCC = 2.7V ±10%
15
mA
VOL
Output Low Voltage
IOL = 1.8mA
0.45
V
VOH
Output High Voltage
IOH = –100AVCC –0.4
V
VID
Identification Voltage
11.5
12.5
V
VLKO
(2)
2.
Sampled only, not 100% tested.
Program/Erase Lockout
Supply Voltage
1.8
2.3
V
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