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參數(shù)資料
| 型號： | M29W640GB70ZA6F |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 |
| 文件頁數(shù)： | 6/90頁 |
| 文件大?。?/td> | 849K |
| 代理商： | M29W640GB70ZA6F |
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Signal descriptions
M29W640GH, M29W640GL, M29W640GT, M29W640GB
2
Signal descriptions
See Figure 1: Logic diagram, and Table 2: Signal names, for a brief overview of the signals
connected to the device.
2.1
Address Inputs (A0-A21)
The Address Inputs select the cells in the memory array to access during Bus Read
operations. During Bus Write operations they control the commands sent to the Command
Interface of the Program/Erase Controller.
2.2
Data Inputs/Outputs (DQ0-DQ7)
The Data I/O outputs the data stored at the selected address during a Bus Read operation.
During Bus Write operations they represent the commands sent to the Command Interface
of the Program/Erase Controller.
2.3
Data Inputs/Outputs (DQ8-DQ14)
The Data I/O outputs the data stored at the selected address during a Bus Read operation
when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high
impedance. During Bus Write operations the Command Register does not use these bits.
When reading the Status Register these bits should be ignored.
2.4
Data Input/Output or Address Input (DQ15A–1)
When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14).
When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the
LSB of the addressed word, DQ15A–1 High will select the MSB. Throughout the text
consider references to the Data Input/Output to include this pin when BYTE is High and
references to the Address Inputs to include this pin when BYTE is Low except when stated
explicitly otherwise.
2.5
Chip Enable (E)
The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to
be performed. When Chip Enable is High, VIH, all other pins are ignored.
2.6
Output Enable (G)
The Output Enable, G, controls the Bus Read operation of the memory.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M29W640GB70ZF3F | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M29W640GB70ZF3F TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 64TBGA |
| M29W640GB70ZF6E | 功能描述:IC FLASH 64MBIT 70NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應商設備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| M29W640GB70ZS6E | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays 制造商:Micron Technology Inc 功能描述:64MBIT PARALLEL NOR FLASH 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 64FBGA |
| M29W640GB70ZS6F | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel |
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