- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296349 > M29W640GB70ZA6F (STMICROELECTRONICS) 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 PDF資料下載
參數(shù)資料
| 型號： | M29W640GB70ZA6F |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 |
| 文件頁數(shù)： | 24/90頁 |
| 文件大?。?/td> | 849K |
| 代理商： | M29W640GB70ZA6F |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁當(dāng)前第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁
Command Interface
M29W640GH, M29W640GL, M29W640GT, M29W640GB
4.2.5
Quadruple Word Program command
This is used to write a page of four adjacent words (or 8 adjacent bytes), in x16 mode,
simultaneously. The addresses of the four words must differ only in A1 and A0.
12V must be applied to the VPP/Write Protect pin, VPP/WP, prior to issuing a Quadruple Byte
Program command. Care must be taken because applying a 12V voltage to the VPP/WP pin
will temporarily unprotect any protected block.
Five bus write cycles are necessary to issue the command:
●
The first bus cycle sets up the command.
●
The second bus cycle latches the Address and the Data of the first word to be written.
●
The third bus cycle latches the Address and the Data of the second word to be written.
●
The fourth bus cycle latches the Address and the Data of the third word to be written.
●
The fifth bus cycle latches the Address and the Data of the fourth word to be written
and starts the Program/Erase Controller.
4.2.6
Unlock Bypass command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory faster than with the standard program commands. When
the cycle time to the device is long, considerable time saving can be made by using these
commands. Three Bus Write operations are required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in Read mode.
When VPP is applied to the VPP/Write Protect pin the memory automatically enters the
Unlock Bypass mode and the Unlock Bypass Program command can be issued
immediately.
4.2.7
Unlock Bypass Program command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory. When the cycle time to the device is long, considerable
time saving can be made by using these commands. Three Bus Write operations are
required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in Read mode.
The memory offers accelerated program operations through the VPP/Write Protect pin.
When the system asserts VPP on the VPP/Write Protect pin, the memory automatically
enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass
program command sequence. The memory uses the higher voltage on the VPP/Write
Protect pin, to accelerate the Unlock Bypass Program operation.
Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the
memory may be left in an indeterminate state.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M2Y51264TU88A2G-37B | 64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240 |
| M30-1201100 | 22 CONTACT(S), FEMALE, TWO PART BOARD CONNECTOR, CRIMP |
| M30-6000206R | 2 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT |
| M30-6000306R | 3 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT |
| M30-6000406R | 4 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W640GB70ZF3F | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M29W640GB70ZF3F TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 64TBGA |
| M29W640GB70ZF6E | 功能描述:IC FLASH 64MBIT 70NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| M29W640GB70ZS6E | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays 制造商:Micron Technology Inc 功能描述:64MBIT PARALLEL NOR FLASH 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 64FBGA |
| M29W640GB70ZS6F | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。