參數(shù)資料
型號(hào)： M29W640GB70ZA6F
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 70 ns, PBGA48
封裝： 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48
文件頁(yè)數(shù)： 30/90頁(yè)
文件大小： 849K
代理商： M29W640GB70ZA6F
Command Interface
M29W640GH, M29W640GL, M29W640GT, M29W640GB
Table 12.
Program, Erase times and endurance cycles
Parameter
Symbol
Min
Typ(1)(2)
Unit
Chip Erase
80
400(3)
s
Block Erase (64 Kbytes)(4)(5)
tWHWH2
0.5
s
Erase Suspend Latency Time
50(6)
s
Program (byte or word)
10
s
Double Byte
10
s
Double Word /Quadruple Byte Program
10
s
Quadruple Word / Octuple Byte Program
10
s
Single Byte and Word Program(7)
tWHWH1
10
s
32 Byte/16 Word Program using Write to Buffer and Program
180
s
32 Byte/16 Word Program using Write to Buffer and Program
(VPP/WP = 12V)
45
s
Chip Program (byte by byte)
80
s
Chip Program (word by word)
40
s
Chip Program (Double Word/Quadruple Byte Program)
20
s
Chip Program (Quadruple Word/Octuple Byte Program)
10
50(3)
s
Program Suspend Latency Time
4
s
Program/Erase Cycles (per Block)
100,000
cycles
Data Retention
20
years
1.
Typical values measured at room temperature and nominal voltages.
2.
Sampled, but not 100% tested.
3.
Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.
4.
This time does not include the pre-programming time.
5.
Block erase polling cycle time (see Figure 19).
6.
Maximum value measured at worst case conditions for both temperature and VCC.
7.
Program polling cycle time (see Figure 6, Figure 7 and Figure 19).
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參數(shù)描述
M29W640GB70ZF3F 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
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M29W640GB70ZS6F 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel
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