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參數(shù)資料
| 型號： | M12L128168A_06 |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 200萬× 16位× 4個銀行同步DRAM |
| 文件頁數(shù)： | 4/43頁 |
| 文件大?。?/td> | 804K |
| 代理商： | M12L128168A_06 |
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ESMT
M12L128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
2.0
Publication Date
:
Oct. 2006
4/43
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted
，
T
A
= 0 to 70 C
Version
Parameter
Symbol
Test Condition
CAS
Latency
-5
-6
-7
Unit
Note
Operating Current
(One Bank Active)
I
CC1
Burst Length = 1, t
RC
≥
t
RC(min)
, I
OL
= 0 mA
170
160
140
mA
1,2
I
CC2P
CKE
≤
V
IL
(max), tcc = t
CK(MIN)
2
Precharge Standby Current
in power-down mode
I
CC2PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
mA
I
CC2N
CKE
≥
V
IH(min)
, CS
≥
V
IH(min)
, t
CC
= t
CK(MIN)
Input signals are changed one time during 2t
ck
45
Precharge Standby Current
in non power-down mode
I
CC2NS
CKE
≥
V
IH(min)
, CLK
≤
V
IL
(max), tcc =
∞
input signals are stable
25
mA
I
CC3P
CKE
≤
V
IL
(max), t
CC
= t
CK(MIN)
6
Active Standby Current
in power-down mode
I
CC3PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
6
mA
I
CC3N
CKE
≥
V
IH
(min), CS
≥
V
IH(min)
, t
CC
= t
CK(MIN)
Input signals are changed one time during 2t
CK
55
mA
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3NS
CKE
≥
V
IH(min)
, CLK
≤
V
IL
(max), t
CC
=
∞
input signals are stable
35
mA
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA, Page Burst, 2 Banks activated
280
210
180
mA
1,2
Refresh Current
I
CC5
t
RC
≥
t
RC(min)
280
210
180
mA
Self Refresh Current
I
CC6
CKE
≤
0.2V
2
mA
Note : 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12L128168A-5TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128168A-6TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128168A-7TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128324A-7BG | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L128324A-7TG | 1M x 32 Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L128168A2L | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:ABSOLUTE MAXIMUM RATINGS |
| M12L128168A-5BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128168A-5BG2L | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:ABSOLUTE MAXIMUM RATINGS |
| M12L128168A-5BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128168A-5T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
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