參數(shù)資料
型號: M12L128168A_06
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 200萬× 16位× 4個銀行同步DRAM
文件頁數(shù): 32/43頁
文件大?。?/td> 804K
代理商: M12L128168A_06
ESMT
M12L128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
2.0
Publication Date
:
Oct. 2006
32/43
Page Read Cycle at Different Bank @ Burst Length = 4
Note: 1. CS can be don’t cared when RAS , CAS and
WE
are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
R o w A c t i v e
( A - B a n k )
R o w A c t i v e
( B - B a n k )
R e a d
( A - B a n k )
R o w A c t i v e
( C - B a n k )
R e a d
( B - B a n k )
P r e c h a r g e
( A - B a n k )
R o w A c t i v e
( D - B a n k )
R e a d
( C - B a n k )
P r e c h a r g e
( B - B a n k )
R e a d
( D - B a n k )
P r e c h a r g e
( C - B a n k )
P r e c h a r g e
( D - B a n k )
: D o n ' t C a r e
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
C L O C K
C K E
C S
R A S
C A S
A D D R
W E
CL=2
DQ M
A10/AP
A13
A12
CL=3
R B b
C A a
R C c
C B b
R D d
C C c
C D d
*Not e 1
*Not e 2
R A a
RDd
QBb0
QBb2
QCc0
QCc1 QCc2 QDd0 QDd1
QAa1
QAa0
QAa2
QBb1
QAa0 QAa1 QAa2 QBb0
QCc1 QCc2 QDd0
QDd2
QDd1
QBb1
QCc0
QBb2
R A a
R B b
R C c
HIGH
DQ
QDd2
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