參數(shù)資料
型號(hào): M12L128168A_06
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 200萬× 16位× 4個(gè)銀行同步DRAM
文件頁數(shù): 35/43頁
文件大?。?/td> 804K
代理商: M12L128168A_06
ESMT
M12L128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
2.0
Publication Date
:
Oct. 2006
35/43
Read & Write cycle with Auto Precharge @ Burst Length = 4
0 1 2 3
4 5 6
7
8
9
10
11
12
13
14 15 16 17
18
19
C L O C K
C K E
C S
R A S
C A S
A D D R
W E
DQ
DQ M
A10/AP
A13
A12
CL = 2
CL = 3
Row Active
( A - Bank )
Row Active
( D - Bank )
Auto Precharge
Start Point
Read with
Auto Precharge
( A - Bank )
Auto Precharge
Start Point
(D-Bank)
: D o n ' t C a r e
QAa1 QAa2 QAa3
Ddb1 DDb2 DDd3
DDb0
QAa0
Ra
Cb
Ra
Ca
Rb
Rb
QAa1 QAa2 QAa3
Ddb1 DDb2 DDd3
DDb0
QAa0
Write with
Auto Precharge
(D-Bank)
HIGH
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M12L128168A-5BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
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