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參數(shù)資料
| 型號： | LH28F800SG-L10 |
| 廠商： | Sharp Corporation |
| 英文描述： | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| 中文描述： | 8 M位（512 KB的× 16）SmartVoltage閃存 |
| 文件頁數(shù)： | 35/45頁 |
| 文件大小： | 328K |
| 代理商： | LH28F800SG-L10 |
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LH28F800SG-L/SGH-L (FOR TSOP, CSP)
- 35 -
NOTES :
1.
Read timing characteristics during block erase, word
write and lock-bit configuration operations are the same
as during read-only operations. Refer to
Section 6.2.4
"AC CHARACTERISTICS"
for read-only operations.
2.
Sampled, not 100% tested.
3.
Refer to
Table 3
for valid A
IN
and D
IN
for block erase,
word write, or lock-bit configuration.
4.
V
PP
should be held at V
PPH1/2/3
(and if necessary RP#
should be held at V
HH
) until determination of block erase,
word write, or lock-bit configuration success (SR.1/3/4/5 = 0).
5.
See
Fig. 10 "Transient Input/Output Reference
Waveform"
and
Fig. 12 "Transient Equivalent Testing
Load Circuit"
(High Speed Configuration) for testing
characteristics.
See
Fig. 11 "Transient Input/Output Reference
Waveform"
and
Fig. 12 "Transient Equivalent Testing
Load Circuit"
(Standard Configuration) for testing
characteristics.
6.
SYMBOL
t
AVAV
PARAMETER
NOTE
MIN.
70
MAX.
MIN.
80
MAX.
MIN.
100
MAX.
Write Cycle Time
RP# High Recovery to WE#
Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
HH
Setup to WE# Going High
V
PP
Setup to WE# Going High
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
PP
Hold from Valid SRD,
RY/BY# High
RP# V
HH
Hold from Valid SRD,
RY/BY# High
ns
t
PHWL
2
1
1
1
μs
t
ELWL
t
WLWH
t
PHHWH
t
VPWH
t
AVWH
t
DVWH
t
WHDX
t
WHAX
t
WHEH
t
WHWL
t
WHRL
t
WHGL
10
40
100
100
40
40
5
5
10
30
10
40
100
100
40
40
5
5
10
30
10
40
100
100
40
40
5
5
10
30
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
2
3
3
90
90
90
0
0
0
t
QVVL
2, 4
0
0
0
ns
t
QVPH
2, 4
0
0
0
ns
VERSIONS
V
CC
±0.25 V
V
CC
±0.5 V
(NOTE 5)
LH28F800SG-L70
LH28F800SGH-L70
(NOTE 6)
LH28F800SG-L10
LH28F800SGH-L10
(NOTE 6)
LH28F800SG-L70
LH28F800SGH-L70
UNIT
6.2.5 AC CHARACTERISTICS FOR WE#-CONTROLLED WRITE OPERATIONS (contd.)
(NOTE 1)
V
CC
= 5.0±0.25 V, 5.0±0.5 V, T
A
= 0 to +70C or –40 to +85
C
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| LH28F800SUT-70 | 8M (512K 】 16, 1M 】 8) Flash Memory |
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| LH28F800BGR-BL85 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-TL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F800SG-L70 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800SGN-L10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGN-L100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGN-L70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGR-L10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
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