參數(shù)資料
型號(hào)： LH28F800SG-L10
廠商： Sharp Corporation
英文描述： 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
中文描述： 8 M位（512 KB的× 16）SmartVoltage閃存
文件頁(yè)數(shù)： 24/45頁(yè)
文件大?。?/td> 328K
代理商： LH28F800SG-L10
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
5 DESIGN CONSIDERATIONS
5.1
The device will often be used in large memory
arrays. SHARP provides three control inputs to
accommodate multiple memory connections. Three-
line control provides for :
Three-Line Output Control
a. Lowest possible memory power consumption.
b. Complete assurance that data bus contention
will not occur.
To use these control inputs efficiently, an address
decoder should enable CE# while OE# should be
connected to all memory devices and the system’s
READ# control line. This assures that only selected
memory devices have active outputs while
deselected memory devices are in standby mode.
RP# should be connected to the system
POWERGOOD signal to prevent unintended writes
during system power transitions. POWERGOOD
should also toggle during system reset.
5.2
RY/BY# and Block Erase, Word Write,
and Lock-Bit Configuration Polling
RY/BY# is a full CMOS output that provides a
hardware method of detecting block erase, word
write and lock-bit configuration completion. It
transitions low after block erase, word write, or lock-
bit configuration commands and returns to V
OH
when the WSM has finished executing the internal
algorithm.
RY/BY# can be connected to an interrupt input of
the system CPU or controller. It is active at all
times. RY/BY# is also V
OH
when the device is in
block erase suspend (with word write inactive),
word write suspend or deep power-down modes.
5.3
Flash memory power switching characteristics
require careful device decoupling. System
designers are interested in three supply current
Power Supply Decoupling
issues; standby current levels, active current levels
and transient peaks produced by falling and rising
edges of CE# and OE#. Transient current
magnitudes depend on the device outputs’
capacitive and inductive loading. Two-line control
and proper decoupling capacitor selection will
suppress transient voltage peaks. Each device
should have a 0.1 μF ceramic capacitor connected
between its V
CC
and GND and between its V
PP
and GND. These high-frequency, low inductance
capacitors should be placed as close as possible to
package leads. Additionally, for every eight devices,
a 4.7 μF electrolytic capacitor should be placed at
the array’s power supply connection between V
CC
and GND. The bulk capacitor will overcome voltage
slumps caused by PC board trace inductance.
5.4
Updating flash memories that reside in the target
system requires that the printed circuit board
designers pay attention to the V
PP
power supply
trace. The V
PP
pin supplies the memory cell current
for word writing and block erasing. Use similar trace
widths and layout considerations given to the V
CC
power bus. Adequate V
PP
supply traces and
decoupling will decrease V
PP
voltage spikes and
overshoots.
V
PP
Trace on Printed Circuit Boards
5.5
Block erase, word write and lock-bit configuration
are not guaranteed if V
PP
falls outside of a valid
V
PPH1/2/3
range, V
CC
falls outside of a valid
V
CC1/2/3/4
range, or RP#
≠
V
IH
or V
HH
. If V
PP
error
is detected, status register bit SR.3 is set to "1"
along with SR.4 or SR.5, depending on the
attempted operation. If RP# transitions to V
IL
during
block erase, word write, or lock-bit configuration,
RY/BY# will remain low until the reset operation is
complete. Then, the operation will abort and the
device will enter deep power-down. The aborted
operation may leave data partially altered.
Therefore, the command sequence must be
V
CC
, V
PP
, RP# Transitions
- 24 -
相關(guān)PDF資料
PDF描述
LH28F800SUT-70 8M (512K 】 16, 1M 】 8) Flash Memory
LH28F800BGR-BL12 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGR-BL85 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGR-TL12 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGR-TL85 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F800SG-L70 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800SGN-L10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM
LH28F800SGN-L100 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM
LH28F800SGN-L70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM
LH28F800SGR-L10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM
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