- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358792 > LH28F800SG-L10 (Sharp Corporation) 8 M-bit (512 kB x 16) SmartVoltage Flash Memories PDF資料下載
參數(shù)資料
| 型號： | LH28F800SG-L10 |
| 廠商： | Sharp Corporation |
| 英文描述： | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| 中文描述： | 8 M位（512 KB的× 16）SmartVoltage閃存 |
| 文件頁數(shù)： | 34/45頁 |
| 文件大?。?/td> | 328K |
| 代理商： | LH28F800SG-L10 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁當(dāng)前第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁
- 34 -
VERSIONS
LH28F800SG-L70
LH28F800SGH-L70
MIN.
85
1
10
50
100
100
50
50
5
5
10
30
LH28F800SG-L10
LH28F800SGH-L10 UNIT
MIN.
MAX.
100
1
10
50
100
100
50
50
5
5
10
30
SYMBOL
t
AVAV
t
PHWL
t
ELWL
t
WLWH
t
PHHWH
t
VPWH
t
AVWH
t
DVWH
t
WHDX
t
WHAX
t
WHEH
t
WHWL
t
WHRL
t
WHGL
t
QVVL
t
QVPH
NOTES :
1.
Read timing characteristics during block erase, word
write and lock-bit configuration operations are the same
as during read-only operations. Refer to
Section 6.2.4
"AC CHARACTERISTICS"
for read-only operations.
2.
Sampled, not 100% tested.
PARAMETER
NOTE
MAX.
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
HH
Setup to WE# Going High
V
PP
Setup to WE# Going High
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
PP
Hold from Valid SRD, RY/BY# High
RP# V
HH
Hold from Valid SRD, RY/BY# High
ns
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
2
2
3
3
100
100
0
0
0
0
0
0
2, 4
2, 4
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
6.2.5 AC CHARACTERISTICS FOR WE#-CONTROLLED WRITE OPERATIONS
(NOTE 1)
V
CC
= 2.7 to 3.0 V, T
A
= 0 to +70
C or –40 to +85
C
VERSIONS
LH28F800SG-L70
LH28F800SGH-L70
MIN.
100
1
10
50
100
100
50
50
5
5
10
30
LH28F800SG-L10
LH28F800SGH-L10 UNIT
MIN.
MAX.
120
1
10
50
100
100
50
50
5
5
10
30
SYMBOL
t
AVAV
t
PHWL
t
ELWL
t
WLWH
t
PHHWH
t
VPWH
t
AVWH
t
DVWH
t
WHDX
t
WHAX
t
WHEH
t
WHWL
t
WHRL
t
WHGL
t
QVVL
t
QVPH
PARAMETER
NOTE
MAX.
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
HH
Setup to WE# Going High
V
PP
Setup to WE# Going High
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
PP
Hold from Valid SRD, RY/BY# High
RP# V
HH
Hold from Valid SRD, RY/BY# High
ns
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
2
2
3
3
100
100
0
0
0
0
0
0
2, 4
2, 4
V
CC
= 3.3±0.3 V, T
A
= 0 to +70
C or –40 to +85
C
3.
Refer to
Table 3
for valid A
IN
and D
IN
for block erase,
word write, or lock-bit configuration.
V
PP
should be held at V
PPH1/2/3
(and if necessary RP#
should be held at V
HH
) until determination of block erase,
word write, or lock-bit configuration success (SR.1/3/4/5 = 0).
4.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F800SUT-70 | 8M (512K 】 16, 1M 】 8) Flash Memory |
| LH28F800BGR-BL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-BL85 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-TL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-TL85 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F800SG-L70 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800SGN-L10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGN-L100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGN-L70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGR-L10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。