參數(shù)資料
型號: LH28F800SG-L10
廠商: Sharp Corporation
英文描述: 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
中文描述: 8 M位(512 KB的× 16)SmartVoltage閃存
文件頁數(shù): 19/45頁
文件大?。?/td> 328K
代理商: LH28F800SG-L10
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
- 19 -
Word Write
Complete
Start
Write 40H,
Address
Write Word
Data and Address
Read
Status Register
0
SR.7 =
1
Full Status
Check if Desired
Repeat for subsequent word writes.
SR full status check can be done after each word write or after
a sequence of word writes.
Write FFH after the last word write operation to place device
in read array mode.
BUS
OPERATION
Write
Write
Read
Standby
COMMAND
Setup
Word Write
COMMENTS
Data = 40H
Addr = Location to be Written
Data = Data to be Written
Addr = Location to be Written
Status Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
SR.3 =
FULL STATUS CHECK PROCEDURE
Read Status Register
Data (See Above)
V
PP
Range Error
1
0
SR.1 =
Device Protect Error
1
0
BUS
OPERATION
COMMAND
COMMENTS
Standby
Check SR.1
1 = Device Protect Detect
RP# = V
IH
, Block Lock-Bit is Set
Only required for systems
implementing lock-bit configuration
SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command in cases where multiple locations are
written before full status is checked.
If error is detected, clear the status register before attempting
retry or other error recovery.
No
Suspend
Word Write
Yes
Suspend Word
Write Loop
Word Write
Word Write
Successful
SR.4 =
Word Write Error
1
0
Standby
Check SR.3
1 = V
PP
Error Detect
Standby
Check SR.4
1 = Data Write Error
Fig. 4 Automated Word Write Flowchart
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