參數(shù)資料
型號(hào)： LH28F800SG-L10
廠商： Sharp Corporation
英文描述： 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
中文描述： 8 M位（512 KB的× 16）SmartVoltage閃存
文件頁(yè)數(shù)： 10/45頁(yè)
文件大小： 328K
代理商： LH28F800SG-L10
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
- 10 -
Table 2 Bus Operations
MODE
NOTE
1, 2, 3, 8
V
IH
or V
HH
3
3
4
8
3, 6, 7, 8
V
IH
or V
HH
RP#
CE#
V
IL
V
IL
V
IH
X
V
IL
V
IL
OE#
V
IL
V
IH
X
X
V
IL
V
IH
WE#
V
IH
V
IH
X
X
V
IH
V
IL
ADDRESS
X
X
X
X
See
Fig. 2
X
V
PP
X
X
X
X
X
X
DQ
0-15
D
OUT
High Z
High Z
High Z
(
NOTE 5)
D
IN
RY/BY#
X
X
X
V
OH
V
OH
X
Read
Output Disable
Standby
Deep Power-Down
Read Identifier Codes
Write
NOTES :
1.
Refer to
Section 6.2.3 "DC CHARACTERISTICS"
.
When V
PP
≤
V
PPLK
, memory contents can be read, but
not altered.
2.
X can be V
IL
or V
IH
for control pins and addresses, and
V
PPLK
or V
PPH1/2/3
for V
PP
. See
Section 6.2.3 "DC
CHARACTERISTICS"
for V
PPLK
and V
PPH1/2/3
voltages.
3.
RY/BY# is V
OL
when the WSM is executing internal
block erase, word write, or lock-bit configuration
algorithms. It is V
OH
during when the WSM is not busy,
in block erase suspend mode (with word write inactive),
word write suspend mode, or deep power-down mode.
V
IH
or V
HH
V
IH
or V
HH
V
IL
V
IH
or V
HH
4.
RP# at GND±0.2 V ensures the lowest deep power-
down current.
See
Section 4.2
for read identifier code data.
V
IH
< RP# < V
HH
produce spurious results and should
not be attempted.
Refer to
Table 3
for valid D
IN
during a write operation.
Don’t use the timing both OE# and WE# are V
IL
.
5.
6.
7.
8.
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LH28F800SGN-L70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM
LH28F800SGR-L10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM
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